SI3851DV-T1 Vishay, SI3851DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3851DV-T1
• Description: MOSFET Small Signal 30V 1.8A 1.15W
• Manufacturer: Vishay

Specifications of SI3851DV-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

Si3851DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
www.vishay.com
4
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
10
1
0.01
- 50
0.0
0.1
2
1
10
-4
0.2
0.02
- 25
0.1
0.05
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.3
T
V
J
SD
I
0
D
= 150 °C
= 250 µA
- Source-to-Drain Voltage (V)
Threshold Voltage
Single Pulse
T
J
25
- Temperature (°C)
10
0.6
-3
50
T
0.9
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
= 25 °C
10
100
-2
1.2
125
A
1.5
150
Square Wave Pulse Duration (s)
= 25 °C, unless otherwise noted
10
-1
0.6
0.5
0.4
0.3
0.2
0.1
1
8
6
4
2
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
I
D
V
GS
= 1 A
0.1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
Notes:
- Gate-to-Source Voltage (V)
P
0
DM
JM
- T
4
Time (s)
A
t
I
1
= P
D
S09-2275-Rev. B, 02-Nov-09
= 1.8 A
t
2
DM
Document Number: 70978
Z
1
thJA
thJA
6
100
(t)
t
t
1
2
= 130 °C/W
8
10
6
0
0
30
10