SI2312DS-T1 Vishay, SI2312DS-T1 Datasheet

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... Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-50574—Rev. E, 04-Apr-05 I (A) Q (Typ 4.9 4.4 11.2 3.9 TO-236 (SOT-23 Top View Si2312DS (C2)* *Marking Code Si2312DS-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C 0 ...

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... Si2312DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge ...

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... V − Source-to-Drain Voltage (V) SD Document Number: 71338 S-50574—Rev. E, 04-Apr 25_C J 0.8 1.0 1.2 Si2312DS Vishay Siliconix Capacitance 1500 1200 C iss 900 600 300 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4.5 V ...

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... Si2312DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0 250 mA D −0.0 −0.1 −0.2 −0.3 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...

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