... Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-50574—Rev. E, 04-Apr-05 I (A) Q (Typ 4.9 4.4 11.2 3.9 TO-236 (SOT-23 Top View Si2312DS (C2)* *Marking Code Si2312DS-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C 0 ...
... Si2312DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge ...
... V − Source-to-Drain Voltage (V) SD Document Number: 71338 S-50574—Rev. E, 04-Apr 25_C J 0.8 1.0 1.2 Si2312DS Vishay Siliconix Capacitance 1500 1200 C iss 900 600 300 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4.5 V ...
... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...