SI1023X-T1 Vishay, SI1023X-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1023X-T1
• Description: MOSFET Small Signal 20V 0.35A
• Manufacturer: Vishay

Specifications of SI1023X-T1

• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: - 370 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-563
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

TYPICAL CHARACTERISTICS (T
Document Number: 71169
S10-2432-Rev. C, 25-Oct-10
1000
100
4.0
3.2
2.4
1.6
0.8
0.0
10
5
4
3
2
1
0
1
0.0
0.0
0
V
I
D
DS
0.2
Source-Drain Diode Forward Voltage
= 250 mA
0.2
= 10 V
On-Resistance vs. Drain Current
200
T
J
0.4
= 25 °C
V
SD
Q
0.4
V
T
g
-
J
GS
I
- Total Gate Charge (nC)
D
S
= 125 °C
V
0.6
- Drain Current (mA)
Gate Charge
o
= 1.8 V
GS
400
u
c r
0.6
= 2.5 V
e
t -
0.8
- o
D
0.8
a r
600
n i
T
1.0
J
V
= - 55 °C
o
V
a t l
A
1.0
GS
g
1.2
= 25 °C, unless otherwise noted)
e
= 4.5 V
(
800
) V
1.2
1.4
1000
1.6
1.4
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
5
4
3
2
1
0
- 50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
= 200 mA
V
f = 1 MHz
- 25
GS
1
= 0 V
4
V
V
T
GS
C
DS
J
oss
0
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
iss
2
Capacitance
8
25
I
V
I
3
D
D
Vishay Siliconix
GS
= 350 mA
= 350 mA
50
= 4.5 V
12
4
75
Si1023X
V
I
www.vishay.com
D
GS
= 150 mA
16
= 1.8 V
100
5
125
20
6
3