si1023x Vishay, si1023x Datasheet

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... Top View Ordering Information: Si1023X-T1-E3 (Lead (Pb)-free) Si1023X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

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... Si1023X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge Q Gate-Source Charge ...

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... 4 600 800 1000 1.0 1.2 1.4 1 °C J 0.8 1.0 1.2 1 Si1023X Vishay Siliconix 120 MHz 100 C 80 iss oss 20 C rss Drain-to-Source Voltage (V) DS Capacitance 1.6 1 ...

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... Si1023X Vishay Siliconix TYPICAL CHARACTERISTICS T 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...