SI6463DQ-T1 Vishay, SI6463DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6463DQ-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI6463DQ-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.017Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 6.2A
• Power Dissipation: 1.05W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: TSSOP
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 71139
S-00280—Rev. A, 21-Feb-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.075
0.060
0.045
0.030
0.015
0.000
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 7.4 A
0.2
V
On-Resistance vs. Drain Current
= 10 V
GS
6
7
V
SD
= 1.8 V
Q
g
T
- Source-to-Drain Voltage (V)
I
0.4
J
D
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
12
14
0.6
18
21
0.8
T
V
V
J
GS
GS
= 25_C
= 2.5 V
= 4.5 V
24
28
1.0
1.2
30
35
New Product
0.075
0.060
0.045
0.030
0.015
0.000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 7.4 A
C
= 4.5 V
1
iss
4
T
V
V
0
C
J
GS
DS
oss
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
Vishay Siliconix
50
= 7.4 A
12
Si6463ADQ
3
75
100
16
www.vishay.com
4
125
150
20
5
2-3