SI6463DQ-T1 Vishay, SI6463DQ-T1 Datasheet

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... 25_C 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si6463ADQ Vishay Siliconix * Source Pins and 7 must be tied common. 10 secs Steady State Unit - 20 "8 "7.4 "6.2 "5.9 "4.9 "30 - 1.35 - 0.95 1.5 1.05 1.0 0. 150 Typical Maximum Unit 65 83 ...

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... Si6463ADQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

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... Document Number: 71139 S-00280—Rev. A, 21-Feb-00 New Product 5000 4000 3000 2000 1000 0.075 0.060 0.045 0.030 T = 25_C J 0.015 0.000 0.8 1.0 1.2 Si6463ADQ Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.4 1.2 1.0 0.8 0 ...

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... Si6463ADQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...

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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...