IS41LV16256-35K ISSI, Integrated Silicon Solution Inc, IS41LV16256-35K Datasheet - Page 4

• Manufacturer Part Number: IS41LV16256-35K
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: EDOr

Specifications of IS41LV16256-35K

• Organization: 256Kx16
• Density: 4Mb
• Address Bus: 9b
• Access Time (max): 35ns
• Maximum Clock Rate: Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: SOJ
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 220mA
• Pin Count: 40
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

IS41C16256
IS41LV16256
Functional Description
The IS41C16256 and IS41LV16256 is a CMOS DRAM
optimized for high-speed bandwidth, low power applica-
tions. During READ or WRITE cycles, each bit is uniquely
addressed through the 18 address bits. These are en-
tered nine bits (A0-A8) at a time. The row address is
latched by the Row Address Strobe (RAS). The column
address is latched by the Column Address Strobe (CAS).
RAS is used to latch the first nine bits and CAS is used the
latter nine bits.
The IS41C16256 and IS41LV16256 has two CAS con-
trols, LCAS and UCAS. The LCAS and UCAS inputs
internally generates a CAS signal functioning in an iden-
tical manner to the single CAS input on the other 256K x
16 DRAMs. The key difference is that each CAS controls
its corresponding I/O tristate logic (in conjunction with OE
and WE and RAS). LCAS controls I/O0 through I/O7 and
UCAS controls I/O8 through I/O15.
The IS41C16256 and IS41LV16256 CAS function is
determined by the first CAS (LCAS or UCAS) transitioning
LOW and the last transitioning back HIGH. The two CAS
controls give the IS41C16256 both BYTE READ and
BYTE WRITE cycle capabilities.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum t
cycle must not be initiated until the minimum precharge
time t
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time speci-
fied by t
t
is dependent on the timing relationships between these
parameters.
Write Cycle
A write cycle is initiated by the falling edge of CAS and
WE, whichever occurs last. The input data must be valid
at or before the falling edge of CAS or WE, whichever
occurs last.
4
CAC
and t
RP
, t
AR
OEA
CP
. Data Out becomes valid only when t
has elapsed.
are all satisfied. As a result, the access time
RAS
time has expired. A new
RAC
, t
AA
,
Refresh Cycle
To retain data, 512 refresh cycles are required in each
8 ms period. There are two ways to refresh the memory.
1. By clocking each of the 512 row addresses (A0 through
2. Using a CAS-before-RAS refresh cycle. CAS-before-
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Extended Data Out Page Mode
EDO page mode operation permits all 512 columns within
a selected row to be randomly accessed at a high data
rate.
In EDO page mode read cycle, the data-out is held to the
next CAS cycle’s falling edge, instead of the rising edge.
For this reason, the valid data output time in EDO page
mode is extended compared with the fast page mode. In
the fast page mode, the valid data output time becomes
shorter as the CAS cycle time becomes shorter. There-
fore, in EDO page mode, the timing margin in read cycle
is larger than that of the fast page mode even if the CAS
cycle time becomes shorter.
In EDO page mode, due to the extended data function, the
CAS cycle time can be shorter than in the fast page mode
if the timing margin is the same.
The EDO page mode allows both read and write opera-
tions during one RAS cycle, but the performance is
equivalent to that of the fast page mode in that case.
Power-On
After application of the V
200 µs is required followed by a minimum of eight initial-
ization cycles (any combination of cycles containing a
RAS signal).
During power-on, it is recommended that RAS track with
V
CC
A8) with RAS at least once every 8 ms. Any read, write,
read-modify-write or RAS-only cycle refreshes the ad-
dressed row.
RAS refresh is activated by the falling edge of RAS,
while holding CAS LOW. In CAS-before-RAS refresh
cycle, an internal 9-bit counter provides the row ad-
dresses and the external address inputs are ignored.
Integrated Silicon Solution, Inc. — 1-800-379-4774
or be held at a valid V
CC
IH
to avoid current surges.
supply, an initial pause of
ISSI
10/28/05
Rev. K
®