CY62147DV30L-55ZSXI Cypress Semiconductor Corp, CY62147DV30L-55ZSXI Datasheet - Page 4

CY62147DV30L-55ZSXI

Manufacturer Part Number
CY62147DV30L-55ZSXI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62147DV30L-55ZSXI

Density
4Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
18b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
15mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
256K
Lead Free Status / Rohs Status
Compliant
Document #: 38-05340 Rev. *F
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Notes:
10. Tested initially and after any design or process changes that may affect these parameters.
11. Test condition for the 45-ns part is a load capacitance of 30 pF.
12. Full device operation requires linear V
13. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
C
C
V
I
t
t
Parameter
CCDR
CDR
R
IN
OUT
Parameter
DR
[12]
CE or
BHE.BLE
[10]
Θ
Θ
JC
JA
Parameter
V
CC
Parameters
V
Data Retention Current
Chip Deselect to Data Retention
Time
Operation Recovery Time
OUTPUT
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
CC
(for all packages)
R
V
R1
R2
INCLUDING
V
TH
TH
for Data Retention
CC
JIG AND
SCOPE
50 pF
Description
Description
[10]
Input Capacitance
Output Capacitance
R1
CC
[13]
[10]
ramp from V
Description
[10]
(Over the Operating Range)
V
R2
CC(min)
t
CDR
DR
Rise Time = 1 V/ns
16667
15385
2.50V
to V
8000
1.20
V
CE > V
V
V
Still Air, soldered on a 3 × 4.5 inch, four-layer
printed circuit board
CC
IN
IN
CC(min.)
= 1.5V
> V
< 0.2V
V
CC
CC
GND
CC
> 100 µs or stable at V
Equivalent to:
T
V
– 0.2V,
– 0.2V or
A
CC
DATA RETENTION MODE
= 25°C, f = 1 MHz,
= V
Test Conditions
Conditions
10%
Test Conditions
CC(typ)
OUTPUT
V
DR
> 1.5 V
ALL INPUT PULSES
1103
1554
3.0V
1.75
645
90%
LL (Ind’l/Auto-A)
CC(min.)
THÉ VENIN EQUIVALENT
L (Auto-E)
> 100 µs.
R
TH
90%
10%
Min.
V
t
1.5
Fall Time = 1 V/ns
RC
CC(min)
VFBGA
0
Max.
V
8.86
t
R
10
10
72
CY62147DV30
Typ.
Unit
V
[5]
TSOP II
75.13
8.95
Max.
Page 4 of 12
15
6
Unit
pF
pF
°C/W
°C/W
Unit
Unit
µA
ns
ns
V
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