CY62127BVLL-70ZI Cypress Semiconductor Corp, CY62127BVLL-70ZI Datasheet

CY62127BVLL-70ZI

Manufacturer Part Number
CY62127BVLL-70ZI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62127BVLL-70ZI

Density
1Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
15mA
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
64K
Lead Free Status / Rohs Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-05155 Rev. *B
Features
Functional Description
The CY62127BV MoBL
CMOS static RAM organized as 64K words by 16 bits. This
device features advanced circuit design to provide ultra-low
active current. This is ideal for providing More Battery Life
(MoBL) in portable applications such as cellular telephones.
The device also has an automatic power-down feature that
Note:
• High Speed: 55 ns and 70 ns
• Wide voltage range: 2.7V–3.6V
• Low active power
• Low standby power (70 ns)
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Package available in a 44-pin TSOP Type II (forward
Logic Block Diagram
1.
pinout) and a 48-ball fBGA package
— 54 mW (max.) (15 mA)
— 54 W (max.) (15 A)
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
A
A
A
A
A
A
A
A
A
10
A
A
9
0
5
8
7
4
2
1
6
3
®
MoBL
[1]
®
is a high-performance
Power - Down
Circuit
COLUMN DECODER
DATA IN DRIVERS
RAM Array
2048 X 512
64K x 16
3901 North First Street
significantly reduces power consumption when addresses are
not toggling, or when deselected (CE HIGH or both BLE and
BHE are HIGH). The input/output pins (I/O
placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
CE
BHE
BLE
1M (64K x 16) Static RAM
15
San Jose
). If Byte High Enable (BHE) is LOW, then data
I/O
I/O
9
through I/O
0
8
–I/O
–I/O
0
BHE
WE
CE
OE
BLE
to I/O
7
15
CA 95134
CY62127BV MoBL
7
. If Byte High Enable (BHE) is
16
0
) is written into the location
through A
Revised August 27, 2002
0
through I/O
1
15
through I/O
).
408-943-2600
8
to I/O
15
15
. See
8
) are
), is
®
0
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CY62127BVLL-70ZI Summary of contents

Page 1

... Circuit Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05155 Rev (64K x 16) Static RAM significantly reduces power consumption when addresses are not toggling, or when deselected (CE HIGH or both BLE and BHE are HIGH) ...

Page 2

Pin Configurations FBGA (Top View BLE I/O BHE CE I I/O A I/O I/O I ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage Output LOW Voltage Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current GND < ...

Page 4

Parameters Data Retention Characteristics Parameter Description V V for Data Retention Data Retention Current CCDR [5] t Chip Deselect to Data Retention Time CDR [6] t Operation Recovery Time R [7] ...

Page 5

Switching Characteristics Over the Operating Range (continued) Parameter t Address Set-Up to Write End AW t Address Hold from Write End HA t Address Set-Up to Write Start Pulse Width PWE t BHE / BLE Pulse Width ...

Page 6

Switching Waveforms (continued) [12, 16, 17] Write Cycle No. 1 (WE Controlled) ADDRESS BHE/BLE OE DATA I/O NOTE 18 t HZOE [12, 16, 17] Write Cycle No. 2 (CE Controlled) ADDRESS CE WE BHE/BLE OE DATA ...

Page 7

Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE NOTE 18 DATAI/O t Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 18 Truth ...

Page 8

... Ordering Information Speed (ns) Ordering Code 55 CY62127BVLL-55ZI 70 CY62127BVLL-70ZI CY62127BVLL-70BAI CY62127BVLL-70BVI Package Diagrams 48-Ball (7. 7. 1.2 mm) FBGA BA48A Document #: 38-05155 Rev. *B Inputs/Outputs High Z Output Disabled Data In (I/O –I/O ) Write O 15 Data In (I/O –I/O ) Write Lower Byte Only O 7 Data In (I/O –I/O ) Write Upper Byte Only ...

Page 9

Package Diagrams (continued) Document #: 38-05155 Rev. *B CY62127BV MoBL 44-pin TSOP II Z44 ® 51-85087-A Page [+] Feedback ...

Page 10

... Document #: 38-05155 Rev. *B © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 11

Document Title: CY62127BV MoBL Document Number: 38-05155 REV. ECN NO. Issue Date ** 109899 10/02/01 *A 113307 03/01/02 *B 116362 09/04/02 Document #: 38-05155 Rev (64K x 16) Static RAM Orig. of Description of Change Change SZV ...

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