AM29DL161DB70EI Spansion Inc., AM29DL161DB70EI Datasheet - Page 3

• Manufacturer Part Number: AM29DL161DB70EI
• Manufacturer: Spansion Inc.

Specifications of AM29DL161DB70EI

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 8.5 to 9.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 16mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Am29DL16xD
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
This product family has been retired and is not recommended for designs.
For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factory-recommended migration
path. Please refer to the S29JL032H data sheet for specifications and ordering information.
For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL032J supersedes Am29DL16xD and is the factory-recom-
mended migration path. Please refer to the S29PL-J data sheet for specifications and ordering information.
Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
■ Multiple bank architectures
■ Secured Silicon Sector
■ Zero Power Operation
■ Package options
■ Top or bottom boot block
■ Manufactured on 0.23 µm process technology
■ Compatible with JEDEC standards
PERFORMANCE CHARACTERISTICS
■ High performance
■ Ultra low power consumption (typical values)
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
— Data can be continuously read from one bank while
— Zero latency between read and write operations
— Four devices available with different bank sizes (refer
— Current version of device has 64 Kbytes; future
— Factory locked and identifiable: 16 bytes available for
— Customer lockable: Can be read, programmed, or
— Sophisticated power management circuits reduce
— 48-ball Very Thin Profile Fine-pitch BGA
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
— 48-pin TSOP
— Compatible with Am29DL16xC devices
— Pinout and software compatible with
— Access time as fast 70 ns
— Program time: 7 µs/word typical utilizing Accelerate
— 2 mA active read current at 1 MHz
executing erase/program functions in other bank
to Table 2)
versions will have 256 bytes
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
erased just like other sectors. Once locked, data
cannot be changed
power consumed during inactive periods to nearly
zero
single-power-supply flash standard
function
DATA SHEET
■ Minimum 1 million write cycles guaranteed per sector
■ 20 Year data retention at 125°C
SOFTWARE FEATURES
■ Data Management Software (DMS)
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
■ Data# Polling and Toggle Bits
■ Unlock Bypass Program command
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
■ Hardware reset pin (RESET#)
■ WP#/ACC input pin
■ Sector protection
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
— Reliable operation for the life of the system
— AMD-supplied software manages data programming
— Eases sector erase limitations
— Suspends erase operations to allow programming in
— Provides a software method of detecting the status of
— Reduces overall programming time when issuing
— Hardware method for detecting program or erase
— Hardware method of resetting the internal state
— Write protect (WP#) function allows protection of two
— Acceleration (ACC) function accelerates program
— Hardware method of locking a sector, either
— Temporary Sector Unprotect allows changing data in
and erasing, enabling EEPROM emulation
same bank
program or erase cycles
multiple program command sequences
cycle completion
machine to reading array data
outermost boot sectors, regardless of sector protect status
timing
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
protected sectors in-system
Publication# 21533
Issue Date: February 26, 2009
Rev: E Amendment: 6