TC58FVM5T2ATG65 Toshiba, TC58FVM5T2ATG65 Datasheet - Page 18

• Manufacturer Part Number: TC58FVM5T2ATG65
• Manufacturer: Toshiba

Specifications of TC58FVM5T2ATG65

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 65ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 22/21Bit
• Operating Supply Voltage (typ): 2.5/3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Program/erase Volt (typ): 8.5 to 9.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 4M/2M
• Supply Current: 55mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

HARDWARE SEQUENCE FLAGS
determined during an auto mode operation. The output data is read out using the same timing as that used when
Hardware Sequence flag is read to determine the device status and the result of the operation is verified by
comparing the read-out data with the original data.
CE = OE = V
The TC58FVM5T2A/B2A/T3A/B3A has a Hardware Sequence flag which allows the device status to be
The device re-enters Read Mode automatically after an auto mode operation has been completed successfully. The
Notes:DQ outputs cell data and
DQ7 (
function. DATA polling begins on the rising edge of WE in the last bus cycle. In an Auto-Program operation,
DQ7 outputs inverted data during the programming operation and outputs actual data after programming has
finished. In an auto-erase operation, DQ7 outputs 0 during the Erase operation and outputs 1 when the Erase
operation has finished. If an Auto-Program or auto-erase operation fails, DQ7 simply outputs the data.
signal.
In Progress
Time Limit
Exceeded
During an Auto-Program or auto-erase operation, the device status can be determined using the data polling
When the operation has finished, the address latch is reset. Data polling is asynchronous with the OE
DQ0 and DQ1 pins are reserved for future use.
0 is output on DQ0, DQ1 and DQ4.
(1) Data output from an address to which Write is being performed is undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
(3) Output when a block address not selected for Auto Block Erase of same bank as selected block is specified and data is
(4) In case of Page program operation is program data of (A0, A1, A2) = (1, 1, 1) in eleventh bus write cycle in word mode.
DATA
During Auto Chip Erase, all blocks are selected.
read from there.
Program data of (A-1, A0, A1, A2) = (1, 1, 1, 1) in nineteenth bus write cycle in byte mode.
IL
Auto Programming/Auto Page Programming
Read in Program Suspend
Auto Programming/Auto Page Programming
Auto Erase
Programming in Erase Suspend
Suspend
In Erase
In Auto
Erase
in Read Mode. The
polling)
STATUS
Erase Hold Time
Programming
Auto Erase
Read
RY
/
BY
RY
goes High-Impedence when the operation has been completed.
(1)
/
Not-selected
BY
Not-selected
Not-selected
Not-selected
Selected
Selected
Selected
Selected
output can be either High or Low.
(2)
(3)
DQ (4)
DQ (4)
DQ (4)
DQ (4)
DQ (4)
Data
Data
DQ7
0
0
0
0
1
0
7
7
7
7
7
TC58FVM5(T/B)(2/3)A(FT/XB)65
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ6
Data
Data
1
DQ5
Data
Data
0
0
0
0
0
0
0
0
1
1
1
DQ3
Data
Data
0
0
0
1
1
0
0
0
0
1
0
2003-06-30 18/64
Toggle
Toggle
Toggle
Toggle
DQ2
Data
Data
NA
NA
1
1
1
1
1
RY
High-Z
High-Z
High-Z
0
0
0
0
0
0
0
0
0
0
/
BY