DT28F160S3100 Intel, DT28F160S3100 Datasheet - Page 23

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DT28F160S3100

Manufacturer Part Number
DT28F160S3100
Description
Manufacturer
Intel
Datasheet

Specifications of DT28F160S3100

Density
16Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
SSOP
Program/erase Volt (typ)
2.7/3.3/5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
2M/1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DT28F160S3100
Manufacturer:
INT
Quantity:
6 000
Part Number:
DT28F160S3100
Manufacturer:
INT
Quantity:
6 000
Part Number:
DT28F160S3100
Manufacturer:
HITACHI
Quantity:
6 219
4.2.6
This field provides critical details of the flash device
geometry.
27h
28h
2Ah
2Ch
2Dh
Offset
ADVANCE INFORMATION
DEVICE GEOMETRY DEFINITION
01h
02h
02h
01h
04h
Length
(bytes)
Device Size = 2
Flash Device Interface Description
Maximum Number of Bytes in Write Buffer = 2
Number of Erase Block Regions within Device:
Erase Block Region Information
bits 15–0 = y, Where y+1 = Number of Erase Blocks of
Identical Size within Region
bits 31–16 = z, Where the Erase Block(s) within This Region
are (z)
Table 10. Device Geometry Definition
256 Bytes
value
0002h
bits 7–0 = x = # of Erase Block Regions
N
in Number of Bytes
Description
meaning
x8/x16 asynchronous
N
28F160S3, 28F320S3
27:
27:
28:
29:
2A:
2B:
2C:
y:
2D:
2E:
y:
2D:
2E:
z:
2F:
30:
28F320S3/
28F160S3
(16Mb)
(32Mb)
(16Mb)
(32Mb)
003Fh
0000h
0015h
0002h
0000h
0005h
0000h
0001h
32 Blk
001Fh
0000h
64 Blk
64-KB
0000h
0001h
0016h
23

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