VQ3001J Vishay, VQ3001J Datasheet - Page 5

• Manufacturer Part Number: VQ3001J
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of VQ3001J

• Number Of Elements: 4
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 14
• Package Type: PDIP
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70221
S-04279—Rev. D, 16-Jul-01
–2.0
–1.6
–1.2
–0.8
–0.4
175
150
125
100
1.65
1.50
1.35
1.20
1.05
0.90
0.75
75
50
25
0
0
0
0
–50
–25
–5
On-Resistance vs. Junction Temperature
–1
V
V
DS
DS
T
0
J
C
– Drain-to-Source Voltage (V)
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
–10
rss
Output Characteristics
V
I
D
–2
25
GS
= –0.5 A
Capacitance
= –4.5 V
–15
50
V
GS
C
oss
–3
= –10 V
75
–20
C
V
f = 1 MHz
iss
V
I
GS
D
GS
100
= –0.1 A
= 0 V
–4
= –10 V
–25
125
–9 V
–8 V
–7 V
–6 V
–5 V
–4 V
_
–30
–5
150
–1000
–10 K
–800
–600
–400
–200
–100
–1 K
–18
–15
–12
–10
–9
–6
–3
–1
0
0
0
0
0
T
J
= 150_C
1000
–2
Source-Drain Diode Forward Voltage
V
V
–1.0
SD
GS
V
I
Q
D
DS
g
= –1 A
– Source-to-Drain Voltage (V)
– Gate-to-Source Voltage (V)
Transfer Characteristics
– Total Gate Charge (pC)
= –15 V
2000
T
–4
J
Gate Charge
= –55_C
Vishay Siliconix
–2.0
T
J
= 25_C
3000
–6
VQ3001J/P
V
I
D
DS
–3.0
= –1 A
125_C
4000
–8
= –24 V
www.vishay.com
25_C
–10
5000
–4.0
11-5