VQ3001J Vishay, VQ3001J Datasheet - Page 3

• Manufacturer Part Number: VQ3001J
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of VQ3001J

• Number Of Elements: 4
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 14
• Package Type: PDIP
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70221
S-04279—Rev. D, 16-Jul-01
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
2.5
2.0
1.5
1.0
0.5
0
0
0
V
0
0
0
GS
V
= 4.5 V
GS
V
DS
= 10 V
25_C
On-Resistance vs. Drain Current
0.5
= 15 V
Ohmic Region Characteristics
V
1
1
T
DS
V
Transfer Characteristics
J
GS
= 125_C
– Drain-to-Source Voltage (V)
I
– Gate-Source Voltage (V)
1.0
D
– Drain Current (A)
2
2
6 V
1.5
–55_C
7 V
3
3
2.0
10 V
4
4
2.5
6 V
5 V
4 V
3 V
2 V
_
3.0
5
5
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
200
160
120
80
40
0
3
2
1
0
0
0
–50
Output Characteristics for Low Gate Drive
On-Resistance vs. Gate-to-Source Voltage
10 V
V
GS
–10
0.4
V
4
Normalized On-Resistance
DS
T
vs. Junction Temperature
= 10 V
V
J
GS
– Drain-to-Source Voltage (V)
– Junction Temperature (_C)
– Gate-Source Voltage (V)
1.0 A
I
D
0.8
30
= 0.2 A
8
2.9 V
0.5 A
Vishay Siliconix
1.2
70
12
VQ3001J/P
I
D
= 0.5 A
110
www.vishay.com
1.6
16
2.5 V
2.3 V
2.1 V
1.7 V
2.7 V
0.1 A
2.0
150
20
11-3