FDS6986S Fairchild Semiconductor, FDS6986S Datasheet - Page 5

• Manufacturer Part Number: FDS6986S
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS6986S

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics: Q2
10
0.01
100
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
1
0
Figure 7. Gate Charge Characteristics.
0.1
R
I
SINGLE PULSE
D
DS(ON)
R
=10A
JA
V
T
GS
A
3
= 135
LIMIT
= 25
= 10V
o
o
C
C/W
V
DS
6
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
DC
9
10s
1s
100ms
12
10ms
1ms
10
V
DS
15
100 s
= 5V
15V
18
10V
100
21
2000
1600
1200
50
40
30
20
10
800
400
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.01
5
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
t
1
C
C
C
, TIME (sec)
OSS
RSS
ISS
1
15
10
SINGLE PULSE
20
R
JA
T
A
= 135°C/W
= 25°C
FDS6986S Rev C1 (W)
V
f = 1MHz
100
GS
25
= 0 V
1000
30