FDS6986S Fairchild Semiconductor, FDS6986S Datasheet - Page 3

• Manufacturer Part Number: FDS6986S
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS6986S

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
Symbol
I
t
Q
V
the drain pins. R
Electrical Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
S
RR
SD
RR
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
CA
I
d
V
V
is determined by the user's board design.
F
(continued)
iF
GS
GS
= 10 A,
/d
= 0 V, I
= 0 V, I
t
= 300 A/µs
Test Conditions
S
S
= 3.5 A
= 1.3 A
b)
T
A
= 25°C unless otherwise noted
125°C/W when
mounted on a
0.02 in
2 oz copper
(Note 3)
2
(Note 2)
(Note 2)
pad of
Type Min
Q2
Q1
Q2
Q2
Q1
Typ Max Units
c)
12.5
0.74
0.5
17
135°C/W when
mounted on a
minimum pad.
3.0
1.3
0.7
1.2
FDS6986S Rev C1 (W)
nC
ns
A
V