IXFN132N50P3 IXYS, IXFN132N50P3 Datasheet - Page 4

• Manufacturer Part Number: IXFN132N50P3
• Description: MOSFET Power 500V 112A 0.039Ohm PolarP3 Power MOSFET
• Manufacturer: IXYS

Specifications of IXFN132N50P3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 112
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 18600
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1500
• Rthjc, Max, (ºc/w): 0.083
• Package Style: SOT-227
• Lead Free Status / Rohs Status: Details

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
100
200
180
160
140
120
100
50
10
80
60
40
20
0
1
0
0.2
3.5
0
f
0.3
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
4.0
5
0.4
0.5
10
4.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
15
5.0
T
J
0.7
= 125ºC
V
V
V
DS
SD
GS
0.8
20
- Volts
5.5
- Volts
- Volts
T
J
= 125ºC
0.9
- 40ºC
25ºC
T
6.0
25
J
= 25ºC
1.0
C oss
C iss
C rss
1.1
6.5
30
1.2
7.0
35
1.3
7.5
1.4
40
1000
100
10
200
180
160
140
120
100
80
60
40
20
10
1
9
8
7
6
5
4
3
2
1
0
0
10
0
0
T
T
Single Pulse
V
I
I
20
J
C
D
G
R
DS
= 150ºC
DS(on)
= 25ºC
= 66A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 250V
40
Limit
50
60
Fig. 8. Transconductance
Fig. 10. Gate Charge
80
Q
100
G
- NanoCoulombs
I
V
D
IXFN132N50P3
100
DS
- Amperes
100
- Volts
120
T
150
J
= - 40ºC
140
125ºC
25ºC
160
200
180
100µs
1ms
200
1,000
250
220