IXFN132N50P3 IXYS, IXFN132N50P3 Datasheet

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IXFN132N50P3

Manufacturer Part Number
IXFN132N50P3
Description
MOSFET Power 500V 112A 0.039Ohm PolarP3 Power MOSFET
Manufacturer
IXYS
Datasheet

Specifications of IXFN132N50P3

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
112
Rds(on), Max, Tj=25°c, (?)
0.039
Ciss, Typ, (pf)
18600
Qg, Typ, (nc)
250
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1500
Rthjc, Max, (ºc/w)
0.083
Package Style
SOT-227
Lead Free Status / Rohs Status
 Details
Polar3
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiPerFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 66A, Note 1
GS
DS
= 0V
t = 1s
DSS
= 0V
, T
TM
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
IXFN132N50P3
JM
500
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
1500
2500
3000
Typ.
112
500
500
±30
±40
330
150
66
35
30
3
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
5.0
39 mΩ
50 μA
6 mA
V/ns
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
miniBLOC with Aluminum Nitride
Isolation
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Easy to Mount
Space Savings
DS(on)
DSS
E153432
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
S
39mΩ Ω Ω Ω Ω
G
500V
112A
250ns
D
DS100316(03/11)
S

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IXFN132N50P3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 66A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN132N50P3 Maximum Ratings 500 = 1MΩ 500 GS ±30 ±40 112 330 ≤ 150° 1500 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... I = 66A 90 DSS D 52 0.05 Characteristic Values Min. Typ. JM 1.9 16.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN132N50P3 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.083 °C/W °C/W Max. 132 A 530 A 1.5 V 250 ns μC A ...

Page 3

... 125º 10V 66A Value vs. D 120 T = 125ºC J 100 T = 25ºC J 150 200 250 IXFN132N50P3 Fig. 2. Extended Output Characteristics @ T 250 V = 10V GS 8V 200 7V 150 100 Volts DS Fig Normalized to I DS(on) Junction Temperature 3 10V GS 2.8 2.4 2.0 1.6 1.2 0.8 0.4 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40ºC 6.0 6.5 7.0 7.5 - Volts T = 25ºC J 0.9 1.0 1.1 1.2 1.3 1.4 1000 C iss 100 C oss C rss IXFN132N50P3 Fig. 8. Transconductance 200 T 180 160 140 120 100 100 120 I - Amperes D Fig. 10. Gate Charge 250V 9 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.01 0.1 Pulse Width - Seconds IXFN132N50P3 1 10 IXYS REF: F_132N50P3(K9)03-17-11 ...

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