NCP382LMN10AATXG ON Semiconductor, NCP382LMN10AATXG Datasheet - Page 9

• Manufacturer Part Number: NCP382LMN10AATXG
• Description: IC DISTR LOAD SWITCH 2CH 8DFN
• Manufacturer: ON Semiconductor

Specifications of NCP382LMN10AATXG

• Lead Free Status / Rohs Status: Compliant

Enable Input
TTL compatible) or connected to the GND or VIN. A logic
low on ENX or high on ENX turns−on the device. A logic
high on ENX or low on ENX turns off device and reduce the
current consumption down to I
Blocking Control
power MOS. When the part is off, the body diode limits the
Power Dissipation
contributor factor such as board layout, ambient
temperature, device environment, etc... Yet, the main
contributor in term of junction temperature is the power
dissipation of the power MOSFET. Assuming this, the
power dissipation and the junction temperature in normal
mode can be calculated with the following equations:
P
R
I
T
R
T
OUTx
D
A
J
DS(on)
qJA
Enable pin must be driven by a logic signal (CMOS or
The blocking control circuitry switches the bulk of the
The device’s junction temperature depends on different
P
D
+ R
DS(on)
T
= Power dissipation (W)
= Power MOSFET on resistance (W)
= Output current in channel X (A)
= Junction temperature (°C)
= Package thermal resistance (°C/W)
= Ambient temperature (°C)
J
+ P
D
I
OUT1
R
INOFF
qJA
2
) T
) I
.
A
OUT2
APPLICATION INFORMATION
2
(eq. 2)
(eq. 3)
http://onsemi.com
9
leakage current I
of the body diode is connected to IN pin and cathode is
connected to OUTX pin. In operating condition, anode of
the body diode is connected to OUTX pin and cathode is
connected to IN pin preventing the discharge of the power
supply.
taking into account the drop V
the following relation:
P
V
R
I
PCB Recommendations
FETs, and the PCB design rules must be respected to
properly evacuate the heat out of the silicon. The DFN8
PAD1 must be connected to ground plane to increase the heat
transfer if necessary. Of course, in any case, this pad must
not connect to any other potential. By increasing PCB area,
the R
current.
OCP
D
P
LOADX
IN
Power dissipation in regulation mode can be calculated by
The NCP382 integrates two up to 1.5 A rated PMOS
D
+
qJA
V
of the package can be decreased, allowing higher
I
IN
OCP
* R
REV
LOAD1
= Power dissipation (W)
= Input Voltage (V)
= Load Resistance on channel X (W)
= Output regulated current (A)
from OUTX to IN. In this mode, anode
I
OCP
IN
) V
−V
OUTX
IN
* R
link to the load by
LOAD2
I
OCP
(eq. 4)