BFY450 (P) Infineon Technologies, BFY450 (P) Datasheet - Page 4

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BFY450 (P)

Manufacturer Part Number
BFY450 (P)
Description
RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFY450 (P)

Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
22000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
100 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 175 C
Package / Case
Micro-X
Dc Collector/base Gain Hfe Min
50 at 20 mA at 1 V
Gain Bandwidth Product Ft
22 GHz
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package
Micro-X
Comment
also available in (S) and (H) quality
Vceo (max)
4.5 V
Ic(max)
100.0 mA
Ptot (max)
450.0 mW
Lead Free Status / Rohs Status
No
Other names
BFY450PNZ
Micro-X Package
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
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Edition 2011-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
V2, February 2011
BFY450

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