BFY450 (P) Infineon Technologies, BFY450 (P) Datasheet - Page 2

• Manufacturer Part Number: BFY450 (P)
• Description: RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY450 (P)

• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: Micro-X
• Dc Collector/base Gain Hfe Min: 50 at 20 mA at 1 V
• Gain Bandwidth Product Ft: 22 GHz
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package: Micro-X
• Comment: also available in (S) and (H) quality
• Vceo (max): 4.5 V
• Ic(max): 100.0 mA
• Ptot (max): 450.0 mW
• Lead Free Status / Rohs Status: No
• Other names: BFY450PNZ

Maximum Ratings
Thermal Resistance
Notes.:
1) At T
2) T
Electrical Characteristics
at T
Notes:
1.) This Test assures V(BR)
IFAG IMM RPD D HIR
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
Junction temperature
Operating temperature range
Storage temperature range
Junction-soldering point
Parameter
DC Characteristics
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Emitter-base cuttoff current
V
DC current gain
I
C
S
CB
CE
EB
= 20 mA, V
A
S
 110°C
=25°C; unless otherwise specified
= 5 V, I
= 4.5 V, I
= 1.5 V, I
is measured on the collector lead at the soldering point to the pcb.
S
= + 110 °C. For T
E
= 0
B
C
CE
1), 2)
= 1.0µA
= 0
= 1 V
2)
S
> + 110 °C derating is required.
CE0
1.)
> 4.5V
Symbol
V
V
V
I
I
P
T
T
T
R
Symbol
I
I
I
h
C
B
CBO
CEX
EBO
FE
j
op
stg
CEO
CBO
EBO
tot
th JS
2 of 4
min.
-
-
-
50
Values
4.5
15
1.5
100
10
450
175
-65...+175
-65...+175
<
145
Values
typ.
-
-
-
90
max.
100
200
(t.b.d.)
50
150
V2, February 2011
Unit
nA
µA
A
-
BFY450
Unit
V
V
V
mA
mA
mW
C
C
C
K/W