NTE2309 NTE Electronics, Inc., NTE2309 Datasheet - Page 2

• Manufacturer Part Number: NTE2309
• Description: Transistor, NPN; TO-3P; NPN; 800 V; 900 V; 7 V (Min.); 12 A; 2.5 W; 0 to 150 de
• Manufacturer: NTE Electronics, Inc.
• Type: High Voltage, Switchr

Specifications of NTE2309

• Current, Collector: 12 A
• Current, Gain: 8
• Device Dissipation: 2.5 W
• Frequency: 15 MHz
• Gain, Dc Current, Minimum: 10 @ VCE == 5V, IC == 0.4A
• Package Type: TO-3P
• Polarity: NPN
• Power Dissipation: 2.5 W
• Primary Type: Si
• Temperature, Junction, Operating: 0 to 150 °C
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Base: 900 V (Min.)
• Voltage, Breakdown, Collector To Emitter: 800 V
• Voltage, Breakdown, Emitter To Base: 7 V (Min.)
• Voltage, Collector To Base: 900 V
• Voltage, Collector To Emitter: 800 V
• Voltage, Collector To Emitter, Saturation: 2 V
• Voltage, Emitter To Base: 7 V

Electrical Characteristics (Cont’d): (T
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Sustaining Voltage
Turn–On Time
Storage Time
Fall Time
.190 (4.82)
(20.0)
Parameter
.787
V
V
V
V
V
Symbol
CEO(sus)
(BR)CBO
(BR)CBO
(BR)EBO
CEX(sus)
(15.02)
(20.0)
t
t
.591
.787
stg
on
t
f
A
= +25 C unless otherwise specified)
I
I
I
I
I
I
I
I
V
I
C
C
E
C
C
B2
C
B2
B2
CC
= 1mA, I
= 5mA, R
= 1mA, I
= 6A, I
= 2A, I
= 1A, I
= –0.4A, Clamped
= –0.2A, Clamped
= –1.6A, R
B
= 400V, I
Test Conditions
B
B1
B1
C
E
= 2A, L = 200 H
= 0.4A, L= 1mH,
= 0.2A, L= 2mH,
BE
= 0
= 0
.615 (15.62)
C
L
C
C
=
= 4A, I
= 100
B1
E
= 0.8A,
.215 (5.47)
Min
900
800
800
800
900
7
–
–
–
Typ
–
–
–
–
–
–
–
–
–
(3.22)
.126
Dia
Max
1.0
3.0
0.7
–
–
–
–
–
–
Unit
V
V
V
V
V
V
s
s
s