NTE2309 NTE Electronics, Inc., NTE2309 Datasheet
NTE2309
Manufacturer Part Number
NTE2309
Description
Transistor, NPN; TO-3P; NPN; 800 V; 900 V; 7 V (Min.); 12 A; 2.5 W; 0 to 150 de
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Switchr
Datasheet
1.NTE2309.pdf
(2 pages)
Specifications of NTE2309
Current, Collector
12 A
Current, Gain
8
Device Dissipation
2.5 W
Frequency
15 MHz
Gain, Dc Current, Minimum
10 @ VCE == 5V, IC == 0.4A
Package Type
TO-3P
Polarity
NPN
Power Dissipation
2.5 W
Primary Type
Si
Temperature, Junction, Operating
0 to 150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
900 V (Min.)
Voltage, Breakdown, Collector To Emitter
800 V
Voltage, Breakdown, Emitter To Base
7 V (Min.)
Voltage, Collector To Base
900 V
Voltage, Collector To Emitter
800 V
Voltage, Collector To Emitter, Saturation
2 V
Voltage, Emitter To Base
7 V
Features:
D High Breakdown Voltage
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Collector Dissipation (T
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. Pules test: Pulse Width
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Output Capacitance
Continuous
Peak (Note 1)
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
EBO
High Voltage, High Current Switch
= +25 C), P
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
Symbol
V
V
= +25 C unless otherwise specified)
I
I
CE(sat)
BE(sat)
C
C
h
C
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2309
V
V
V
V
V
I
I
V
C
C
CB
EB
CE
CE
CE
CB
= 3A, I
= 3A, I
= 400V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
B
B
C
C
C
= 0.6A
= 0.6A
C
= 0
= 0.4A
= 2A
E
= 0.4A
10%.
= 0
Min
10
–
–
8
–
–
–
–
Typ
120
15
–
–
–
–
–
–
–55 to +150 C
Max
2.0
1.5
10
10
–
–
–
–
+150 C
100W
Unit
MHz
900V
800V
2.5W
pF
V
V
12A
25A
A
A
7V
4A
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NTE2309 Summary of contents
Page 1
... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain–Bandwidth Product Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Output Capacitance NTE2309 Silicon NPN Transistor = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector–Emitter Sustaining Voltage Turn–On Time Storage Time Fall Time .190 (4.82) .787 (20.0) = +25 C unless otherwise specified) A Symbol Test Conditions ...