S-8261AAHMD-G2H-T2 Seiko Instruments, S-8261AAHMD-G2H-T2 Datasheet - Page 16

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S-8261AAHMD-G2H-T2

Manufacturer Part Number
S-8261AAHMD-G2H-T2
Description
Battery Management 4.28V Single Cell
Manufacturer
Seiko Instruments

Specifications of S-8261AAHMD-G2H-T2

Product
Li-Ion Protection
Battery Type
Li-Ion, Li-Pol
Output Voltage
8 V
Operating Supply Voltage
1.5 V to 8 V
Supply Current
7 uA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
SOT-23-6
Mounting Style
SMD/SMT
Uvlo Start Threshold
1 V
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
16
BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
(10) Test Condition 10, Test Circuit 5
(6) Test Condition 6, Test Circuit 3
(7) Test Condition 7, Test Circuit 4
(8) Test Condition 8, Test Circuit 4
(9) Test Condition 9, Test Circuit 5
(11) Test Condition 11, Test Circuit 2 (Product with 0 V battery charge function)
〈〈 Internal Resistance between VM and VDD, Internal Resistance between VM and VSS 〉〉
〈〈 CO Pin Resistance “H”, CO Pin Resistance “L” 〉〉
〈〈 DO Pin Resistance “H”, DO Pin Resistance “L” 〉〉
〈〈 Overcharge Detection Delay Time, Overdischarge Detection Delay Time 〉〉
〈〈 Overcurrent 1 Detection Delay Time, Overcurrent 2 Detection Delay Time, Load Short-circuiting
〈〈 0 V Battery Charge Starting Charger Voltage 〉〉
Detection Delay Time, Abnormal Charge Current Detection Delay Time 〉〉
The resistance between VM and VDD (R
conditions of V1 = 1.8 V and V2 = 0 V.
The resistance between VM and VSS (R
conditions of V1 = 3.5 V and V2 = 1.0 V.
The CO pin resistance “H” (R
0 V and V3 = 3.0 V.
The CO pin resistance “L” (R
and V3 = 0.5 V.
The DO pin resistance “H” (R
0 V and V4 = 3.0 V.
The DO pin resistance “L” (R
and V4 = 0.5 V.
The overcharge detection delay time (t
voltage V1 momentarily increases (within 10 µs) from the overcharge detection voltage (V
overcharge detection voltage (V
The overdischarge detection delay time (t
voltage V1 momentarily decreases (within 10 µs) from the overdischarge detection voltage (V
overdischarge detection voltage (V
The overcurrent 1 detection delay time (t
momentarily increases (within 10 µs) from 0 V to 0.35 V under the set condition of V1 = 3.5 V and V2=0 V.
The overcurrent 2 detection delay time (t
momentarily increases (within 10 µs) from 0 V to 0.7 V under the set condition of V1 = 3.5 V and V2 = 0 V.
The load short-circuiting detection delay time (t
momentarily increases (within 10 µs) from 0 V to 1.6 V under the set condition of V1 = 3.5 V and V2 = 0 V.
The abnormal charge current detection delay time is the time needed for V
voltage V2 momentarily decreases (within 10 µs) from 0 V to −1.1 V under the set condition of V1 = 3.5 V and
V2 = 0 V. The abnormal charge current detection delay time has the same value as the overcharge detection
delay time.
The 0 V battery charge starting charger voltage (V
which V
condition of V1 = V2 = 0 V.
CO
goes “H” (V
VM
+ 0.1 V or higher) when the voltage V2 is gradually decreased from the starting
COL
DOL
COH
DOH
CU
) is the resistance t the CO pin under the set condition of V1 = 4.5 V, V2 = 0 V
) is the resistance t the DO pin under the set condition of V1 = 1.8 V, V2 = 0 V
) is the resistance t the CO pin under the set condition of V1 = 3.5 V, V2 =
) is the resistance t the DO pin under the set condition of V1 = 3.5 V, V2 =
) + 0.2 V under the set condition of V2 = 0 V.
DL
) − 0.2 V under the set condition of V2 = 0 V.
Seiko Instruments Inc.
CU
) is the time needed for V
DL
VMS
VMD
) is the time needed for V
IOV1
IOV2
) is the internal resistance between VM and VDD under the set
) is the internal resistance between VM and VDD under the set
) is the time needed for V
) is the time needed for V
SHORT
0CHA
) is the time needed for V
) is defined as the voltage between VDD and VM at
CO
DO
to change from “H” to “L” just after the
to change from “H” to “L” just after the
DO
DO
CO
DO
to go “L” after the voltage V2
to go “L” after the voltage V2
to go from “H” to “L” after the
to go “L” after the voltage V2
CU
DL
) − 0.2 V to the
Rev.1.9
) +0.2 V to the
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