R1LV0808ASB-5SI#B0 Renesas Electronics America, R1LV0808ASB-5SI#B0 Datasheet

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R1LV0808ASB-5SI#B0

Manufacturer Part Number

R1LV0808ASB-5SI#B0

Description

Manufacturer

Renesas Electronics America

Datasheet

1.R1LV0808ASB-5SIB0.pdf (17 pages)

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R1LV0808ASB – 5SI, 7SI

8Mb Advanced LPSRAM (1024k word x 8bit)

Description

fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

and battery backup are the important design objectives.

plastic TSOP (II)]. It gives the best solution for a compaction of mounting area as well as flexibility of wiring

pattern of printed circuit boards.

Features

Ordering information

REJ03C0394-0100

Page 1 of 14

R1LV0808ASB-5SI

R1LV0808ASB-7SI

The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit,

The R1LV08808ASB is suitable for memory applications where a simple interfacing, battery operating

The R1LV0808ASB is packaged in a 44pin thin small outline mount device [11.76mm×18.41mm 44-pin

Single 2.4-3.6V power supply

Small stand-by current: 1.2 A (Vcc=3.0V, typ.)

No clocks, No refresh

All inputs and outputs are TTL compatible

Easy memory expansion by CS1# andCS2

Common Data I/O

Three-state outputs: OR-tie capability

OE# prevents data contention in the I/O bus

Operation temperature: -40

Type No.

Rev.0.01 2009.12.08

Power supply

2.7V to 3.6V

2.4V to 2.7V

2.4V to 3.6V

~

+85°C

Access time

55 ns

70 ns

70 ns

Temperature

-40 ~ +85°C

Range

11.76mm×18.41mm 44-pin plastic TSOP (II)

(normal-bend type) (44P3F)

Package

REJ03C0394-0100

2009.12.08

Rev.1.00

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