K4H281638B-TCB0000 Samsung Semiconductor, K4H281638B-TCB0000 Datasheet - Page 51

• Manufacturer Part Number: K4H281638B-TCB0000
• Manufacturer: Samsung Semiconductor

Specifications of K4H281638B-TCB0000

• Lead Free Status / Rohs Status: Supplier Unconfirmed

128Mb DDR SDRAM
9. AC Operating Test Conditions
10. Input/Output Capacitance
(V
Input reference voltage for Clock
Input signal maximum peak swing
Input Levels(V
Input timing measurement reference level
Output timing measurement reference level
Output load condition
(V
Input capacitance
(A
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
DD
DD
0
=2.5V, V
~ A
=2.5, V
1 1
, BA
DDQ
DDQ
IH
0
/V
~ BA
=2.5V, T
=2.5V, T
IL
)
Parameter
Parameter
1,
CKE, CS, RAS,CAS, WE)
A
A
= 25
= 0 to 70 C )
Output
C
Figure 26. Output Load Circuit (SSTL_2)
, f=1MHz)
Table 17. AC operating test conditions
Table 18. Input/output capacitance
Z0=50
C
LOAD
- 51 -
=30pF
V
Symbol
tt
C
C
C
C
=0.5*V
OUT
IN1
IN2
IN3
V
R
REF
DDQ
T
See Load Circuit
=50
+0.31/V
0.5 * V
V
=0.5*V
Min
4.0
4.0
REF
2
2
Value
V
1.5
V
REF
tt
DDQ
DDQ
REF
-0.31
Max
REV. 1.31 Nov. 3. 2001
3.0
3.0
5.0
5.0
Delta Cap(max)
0.25
0.5
0.5
Unit
V
V
V
V
V
Note
Unit
pF
pF
pF
pF