K4H511638C-ZLB3 Samsung Semiconductor, K4H511638C-ZLB3 Datasheet - Page 5

• Manufacturer Part Number: K4H511638C-ZLB3
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H511638C-ZLB3

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 185mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

DDR SDRAM 512Mb C-die (x4, x8, x16)
4.0 Ball Description
128M x 4
64M x 8
32M x 16
1
2
3
7
8
9
1
2
3
7
8
9
1
2
3
7
8
9
VDDQ
VDDQ
VSSQ
VSSQ
VSSQ
VDDQ
DQ15
VDD
VDD
DQ7
VSS
DQ0
VDD
VSS
VSS
DQ0
NC
NC
A
A
A
VDDQ
VDDQ
VSSQ
VDDQ
VSSQ
VSSQ
DQ14
DQ13
DQ6
DQ1
DQ3
DQ0
DQ2
DQ1
NC
NC
NC
NC
B
B
B
DM is internally loaded to match DQ and DQS identically.
Organization
(Bottom
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
DQ12
DQ11
128Mx4
32Mx16
DQ5
DQ2
DQ4
DQ3
64Mx8
NC
NC
NC
NC
NC
NC
C
C
C
Row & Column address configuration
VDDQ
VDDQ
VSSQ
VDDQ
VSSQ
VSSQ
DQ10
DQ4
DQ3
DQ2
DQ1
DQ9
DQ6
DQ5
NC
NC
NC
NC
D
D
View)
D
VDDQ
VSSQ
VDDQ
VSSQ
UDQS
VDDQ
VSSQ
LDQS
DQS
DQS
DQ8
DQ7
NC
NC
NC
NC
NC
NC
E
E
E
Row Address
A0~A12
A0~A12
A0~A12
VREF
VREF
VREF
VDD
UDM
VDD
VSS
LDM
VDD
VSS
VSS
DM
DM
NC
NC
NC
NC
NC
F
F
F
CAS
CAS
CAS
WE
WE
CK
CK
WE
CK
CK
CK
CK
G
G
G
CKE
RAS
CKE
RAS
CKE
RAS
A12
A12
A12
CS
CS
CS
H
H
H
Column Address
A0-A9, A11, A12
A0-A9, A11
A0-A9
BA1
BA0
BA1
BA0
A11
BA1
BA0
A11
A11
A9
A9
A9
J
J
J
A10/AP
A10/AP
A10/AP
A8
A7
A0
A8
A7
A0
A8
A7
A0
K
K
K
Rev. 1.1 June. 2005
DDR SDRAM
A6
A5
A2
A1
A6
A5
A2
A1
A6
A5
A2
A1
L
L
L
VDD
VSS
VDD
VSS
VDD
VSS
A4
A3
A4
A3
A4
A3
M
M
M