IS43R32400A-6B ISSI, Integrated Silicon Solution Inc, IS43R32400A-6B Datasheet

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IS43R32400A-6B

Manufacturer Part Number
IS43R32400A-6B
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
DDR SDRAMr
Datasheet

Specifications of IS43R32400A-6B

Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
850ps
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.625V
Operating Supply Voltage (min)
2.375V
Supply Current
420mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
IS43R32400A
FEATURES
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
4Meg x 32
128-MBIT DDR SDRAM
Clock Frequency: 200, 166, 100 MHz
Power supply (V
SSTL 2 interface
Four internal banks to hide row Pre-charge
and Active operations
Commands and addresses register on positive
clock edges (CLK)
Bi-directional Data Strobe signal for data cap-
ture
Differential clock inputs (CLK and CLK) for
two data accesses per clock cycle
Data Mask feature for Writes supported
DLL aligns data I/O and Data Strobe transitions
with clock inputs
Half-strength and Matched drive strength
options
Programmable burst length for Read and Write
operations
Programmable CAS Latency (3, 4, 5 clocks)
Programmable burst sequence: sequential or
interleaved
Burst concatenation and truncation supported
for maximum data throughput
Auto Pre-charge option for each Read or Write
burst
4096 refresh cycles every 32ms
Auto Refresh and Self Refresh Modes
Pre-charge Power Down and Active Power
Down Modes
Industrial Temperature Availability
Lead-free Availability
DD
and V
DDQ
): 2.5V
DEVICE OVERVIEW
ISSI’s 128-Mbit DDR SDRAM achieves high-speed
data transfer using pipeline architecture and two data
word accesses per clock cycle. The 134,217,728-bit
memory array is internally organized as four banks of
32M-bit to allow concurrent operations. The pipeline
allows Read and Write burst accesses to be virtually
continuous, with the option to concatenate or truncate
the bursts. The programmable features of burst
length, burst sequence and CAS latency enable
further advantages. The device is available in 32-bit
data word size. Input data is registered on the I/O pins
on both edges of Data Strobe signal(s), while output
data is referenced to both edges of Data Strobe and
both edges of CLK. Commands are registered on the
positive edges of CLK. Auto Refresh, Active Power
Down, and Pre-charge Power Down modes are
enabled by using clock enable (CKE) and other inputs
in an industry-standard sequence. All input and
output voltage levels are compatible with SSTL 2.
IS43R32400A
1M x32x4 Banks
V
V
144-ball BGA
KEY TIMING PARAMETERS
Parameter
CLK Cycle Time (min.)
CAS Latency = 5
CAS Latency = 4
CAS Latency = 3
CLK Frequency (max.)
CAS Latency = 5
CAS Latency = 4
CAS Latency = 3
DD
DDQ
: 2.5V
: 2.5V
PRELIMINARY INFORMATION
FEBRUARY 2006
200
200
200
-5
5
5
5
166
166
166
-6
6
6
6
Unit
MHz
MHz
MHz
ns
ns
ns
®
1

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IS43R32400A-6B Summary of contents

Page 1

... CLK. Commands are registered on the positive edges of CLK. Auto Refresh, Active Power Down, and Pre-charge Power Down modes are enabled by using clock enable (CKE) and other inputs in an industry-standard sequence. All input and output voltage levels are compatible with SSTL 2. IS43R32400A 1M x32x4 Banks ...

Page 2

... IS43R32400A FUNCTIONAL BLOCK DIAGRAM ( CLK COMMAND CLK DECODER CKE & CS CLOCK RAS GENERATOR CAS WE MODE REGISTER A11 14 A10 ROW BA0 ADDRESS BA1 LATCH 14 COLUMN ADDRESS LATCH 8 BURST COUNTER COLUMN ADDRESS BUFFER 2 32) X REFRESH CONTROLLER SELF REFRESH CONTROLLER REFRESH COUNTER ROW ADDRESS ...

Page 3

... IS43R32400A PIN CONFIGURATION PACKAGE CODE: B 144-BALL FBGA (Top View) (12. 12.00 mm Body, 0.8 mm Ball Pitch DQS0 DM0 B DQ4 VDDQ C DQ6 DQ5 D DQ7 VDDQ E DQ17 DQ16 F DQ19 DQ18 G DQS2 DM2 H DQ21 DQ20 J DQ22 DQ23 K CAS WE L RAS Note: Vss balls inside the dotted box are optional for purposes of thermal dissipation. ...

Page 4

... IS43R32400A PIN FUNCTIONS Symbol Type A0-A11 Input Pin BA0, BA1 Input Pin CAS Input Pin CKE Input Pin CLK, CLK Input Pin CS Input Pin DM0-DM3 Input Pin DQS0-DQS3 Input/Output Pin DQ0-DQ31 Input/Output Pin NC — RAS Input Pin WE Input Pin VDDQ Power Supply Pin ...

Page 5

... IS43R32400A COMMAND TRUTH TABLE Function CKE ( CKE (n) Device Deselect (NOP) No Operation (NOP) (2) Burst Stop (3) Read (3) Write Bank and Row Activate Pre-charge select bank Pre-charge all banks Load Mode Register (Base) Load Extended Mode Register Auto Refresh Self Refresh Notes VIH VIL VIH or VIL Valid Data. ...

Page 6

... IS43R32400A DETAILED COMMAND TRUTH TABLE - SAME BANKS Function (n) Command (n) NOP or Continue Deselect previous operation NOP or Continue NOP previous operation Activate row Active Issue Auto Refresh Auto Refresh Load the Base/ Load Mode Register Extended Mode Register Start Read Burst Read Read ...

Page 7

... IS43R32400A DETAILED COMMAND TRUTH TABLE - DIFFERENT BANKS (bank b, then bank g) Function (n) Command (n) NOP or Continue Deselect previous operation NOP or Continue NOP previous operation Issue any command to Any command bank g otherwise valid Start Read Burst in Read bank g Read Read Read Read Start Write Burst in bank g ...

Page 8

... IS43R32400A DETAILED COMMAND TRUTH TABLE - DIFFERENT BANKS (bank b, then bank g) Function (n) Command (n) Start Pre-charge Pre-charge Pre-charge Pre-charge Pre-charge Pre-charge Note Write command may be terminated only at the completion of the Read burst. However, a Burst Terminate can be transmitted to end the Read burst early so that a Write command can be asserted. ...

Page 9

... IS43R32400A ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage DD MAX V Maximum Supply Voltage for Output Buffer DDQ MAX Input Voltage, Reference Voltage IN REF V Output Voltage OUT P Allowable Power Dissipation D MAX I Output Shorted Current CS T Operating Temperature OPR T Storage Temperature STG Notes: 1 ...

Page 10

... IS43R32400A DC ELECTRICAL CHARACTERISTICS Symbol Parameter I Operating Current Operating Current Precharge Power-Down Standby Current I Idle Standby Current Active Power-Down Standby Current I Active Standby Current Operating Current Burst Read I Operating Current Burst Write I Auto Refresh Current Self Refresh Current Operating Current 7 DD Notes: 1.Operating outside the “ ...

Page 11

... IS43R32400A AC ELECTRICAL CHARACTERISTICS (V Symbol Parameter t Clock Cycle Time CK t Clock High Level Width CH t Clock Low Level Width CL DQS-Out Access Time from CLK, CLK t DQSCK Output Access Time from CLK, CLK DQS-DQ Skew DQSQ t Read Preamble RPRE t Read Postamble RPST t CLK to Valid DQS-In ...

Page 12

... IS43R32400A AC TEST CONDITIONS Output Load Z = 25Ω Output TEST CONDITIONS Parameter Input Signal Levels Input Signal Slew Rate Input Timing Reference Level Output Timing Measurement Reference Level CLK and CLK Signal Maximum Peak Swing Reference Level of Input/Ouput Signals 0 DDQ 25Ω 0 REF ...

Page 13

... IS43R32400A FUNCTIONAL DESCRIPTION The 128Mbit DDR SDRAM is a high-speed CMOS device with four banks that operate at 2.5V. Each 32Mbit bank is organized as 4,096 rows of 256 columns for the x32 options. Pre-fetch architecture allows Read and Write accesses to be double-data rate and burst oriented. Accesses start at a selected column location and continue every half-clock cycle for a programmed number of times ...

Page 14

... IS43R32400A MODE REGISTER DEFINITION The mode register allows configuration of the operat- ing mode of the DDR SDRAM. This register is loaded as a step in the normal initialization of the device. The Load Mode Register command samples the values on inputs A0-A11, BA0 (Low) and BA1 (Low) and stores them as register values M0-M13 ...

Page 15

... IS43R32400A BURST LENGTH The highest access throughput of this device can be achieved by using a burst of either Read or Write accesses. The number of accesses in each burst would be pre-configured full page as shown in Mode Register Definition (bits M0-M2). When a Read or Write command is given to the device, the address bits A0-A7 (x32) select the block of columns and the starting column for the subsequent burst ...

Page 16

... IS43R32400A EXTENDED MODE REGISTER DEFINITION The Extended Mode Register is a second register to enable additional functions of the DDR SDRAM. This register is loaded as a step in the normal initialization of the device. The Load Extended Mode Register command samples the values on inputs A0-A11, BA0 (High) and BA1 (Low) and stores them as register values E0-E13 ...

Page 17

... IS43R32400A COMMANDS All commands described in this section should be issued only when the initialization sequence is obeyed. Deselect This feature blocks unwanted commands from being executed. Chip select (CS) must be taken High to cause Deselect. Operations that are underway are not affected. No Operation (NOP) NOP is a command that prevents new commands from being executed ...

Page 18

... IS43R32400A Auto Refresh The DDR SDRAM is issued the Auto Refresh com- mand during normal operation to maintain data in the memory array. All the banks must be idle for the command to be executed. The device has 4096 refresh cycles every 32ms. Self Refresh To issue the Self Refresh command, CKE must be Low ...

Page 19

... IS43R32400A Write Operation A Write command starts a burst from an activated row. The Write command is depicted in the figure. As CLK goes High, CS, WE, and CAS are Low, while CKE and RAS are High. The values on the inputs BA0 and BA1 specify the bank to access, and the address inputs specify the starting column in the open row ...

Page 20

... IS43R32400A Timing Waveforms Figure 1. AC Parameters for Read Timing ( Burst Length =4) Figure 2. AC Parameters for Write Timing (Burst Length=4 ) CK# CK CMD A0-11, DQS Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI ® Rev. 00D 02/15/06 ...

Page 21

... IS43R32400A Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. 00D 02/15/06 ISSI ® 21 ...

Page 22

... IS43R32400A Figure 6. Write with Auto Precharge (Burst Length = 4) Figure 7. Read Burst Interrupt by Read (CAS Letancy =5, Burst Length = 4 ) Figure 8. Write Interrupted by Write (Burst Length =4) Figure 9. Auto Refresh Timing 22 Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI ® Rev. 00D 02/15/06 ...

Page 23

... IS43R32400A Figure 11. Precharge Command Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. 00D 02/15/06 t MRD ISSI ® 23 ...

Page 24

... MHz 6 24 Order Part No. Package IS43R32400A-5B 144-ball FBGA IS43R32400A-5BL 144-ball FBGA, Lead-free IS43R32400A-6B 144-ball FBGA IS43R32400A-6BL 144-ball FBGA, Lead-free Order Part No. Package IS43R32400A-6BI 144-ball FBGA IS43R32400A-6BLI 144-ball FBGA, Lead-free Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI ® Rev. 00D 02/15/06 ...

Page 25

PACKAGING INFORMATION Mini Ball Grid Array Package Code: B (144-Ball SEATING PLANE mBGA - 12mm ...

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