EV2A08AMNYU35 E2V, EV2A08AMNYU35 Datasheet - Page 5

• Manufacturer Part Number: EV2A08AMNYU35
• Manufacturer: E2V

Specifications of EV2A08AMNYU35

• Lead Free Status / Rohs Status: Supplier Unconfirmed

2.2
e2v semiconductors SAS 2010
Power Up and Power Down Sequencing
MRAM is protected from write operations whenever V
V
ory power supplies to stabilize.
The E and W control signals should track V
remain high for the startup time. In most systems, this means that these signals should be pulled up with
a resistor so that signal remains high if the driving signal is Hi-Z during power up. Any logic that drives E
and W should hold the signals high with a power-on reset signal for longer than the startup time.
During power loss or brownout where V
be observed when power returns above V
Figure 2-1.
Table 2-3.
Parameter
Input leakage current
Output leakage current
Output low voltage
(I
(I
Output high voltage
(I
(I
DD
OL
OL
OL
OL
(min), there is a startup time of 2 ms before read or write operations can start. This time allows mem-
= +4 mA)
= –4 mA)
= –100 µA)
= +100 µA)
Writes Inhibited
Power Up and Power Down Diagram
DC Characteristics
V
WI
W
E
Startup time
Normal Operation
Symbol
I
I
V
V
lkg(I)
lkg(O)
DD
OL
OH
DD
V
goes below V
DD
DD
(min).
on power up to V
Brownout or power loss
Min
–
–
–
2.4
V
DD
– 0.2
WI
DD
, writes are protected and a startup time must
is less than V
DD
Startup time
–
–
–
–
– 0.2 V or V
Typical
Normal Operation
WI
. As soon as V
V
IH
DD
Max
±1
±1
0.4
V
–
(whichever is lower) and
SS
1024B–HIREL–10/10
+ 0.2
EV2A08A
V
WI
DD
Unit
µA
µA
V
V
exceeds
5