EV2A08AMNYU35 E2V, EV2A08AMNYU35 Datasheet - Page 4

• Manufacturer Part Number: EV2A08AMNYU35
• Manufacturer: E2V

Specifications of EV2A08AMNYU35

• Lead Free Status / Rohs Status: Supplier Unconfirmed

2. Electrical Specifications
2.1
4
Absolute Maximum Ratings
1024B–HIREL–10/10
EV2A08A
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
Table 2-1.
Notes:
Table 2-2.
Notes:
Parameter
Supply voltage
Voltage on an pin
Output current per pin
Package power dissipation
Temperature under bias
EV2A08AM
Storage Temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write EV2A08A (All Temperatures)
Maximum magnetic field during read or standby
Parameter
Power supply voltage
Write inhibit voltage
Input high voltage
Input low voltage
Operating temperature
EV2A08AV (Industrial)
EV2A08AM (Military)
1. Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
2. All voltages are referenced to V
3. Power dissipation capability depends on package characteristics and use environment.
1. There is a 2 ms startup time once V
2. V
3. V
4. Automotive temperature profile assumes 10% duty cycle at maximum temperature (2-years out of 20-
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
below.
year life).
IH
IL
(2)
(min) = –0.5 V
(max) = V
Absolute Maximum Ratings
Operating Conditions
(2)
DD
+ 0.3 V
DC
; V
Symbol
V
V
V
V
Tcase
IL
DD
WI
IH
IL
DC
(min) = –2.0 V
; V
IH
(max) = V
SS
.
(1)
DD
Value
3.0
2.5
2.2
–0.5
–40
–55
AC
exceeds V
DD
(1)
(pulse width = 10 ns) for I = 20.0 mA.
(3)
+ 2.0 V
DD
AC
,(min). See Power Up and Power Down Sequencing
Symbol
V
V
I
P
T
T
T
H
H
OUT
BIAS
stg
Lead
(pulse width = 10 ns) for I = 20.0 mA.
DD
IN
D
max_write
max_read
Typical
3.3
2.7
–
–
Value
–0.5 to 4.0
–0.5 to V
±20
0.600
–55 to 125
–55 to 125
260
2000
8000
Max
3.6
3.0
V
0.8
110
125
DD
(1)
+ 0.3
e2v semiconductors SAS 2010
DD
(2)
+ 0.5
Unit
V
V
V
V
°C
Unit
V
V
mA
W
°C
°C
°C
A/m
A/m