IS42S16400-8TL ISSI, Integrated Silicon Solution Inc, IS42S16400-8TL Datasheet - Page 7

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IS42S16400-8TL

Manufacturer Part Number
IS42S16400-8TL
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S16400-8TL

Organization
4Mx16
Density
64Mb
Address Bus
14b
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
140mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
IS42S16400
AC CHARACTERISTICS
Notes:
1. When power is first applied, memory operation should be started 100 µs after Vcc and VccQ reach their stipulated voltages. Also
2. Measured with t
3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between V
4. Access time is measured at 1.4V with the load shown in the figure below.
5. The time t
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION Rev. 00A
06/07/00
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
AC
AC
CHI
CL
OH
OH
LZ
HZ
HZ
DS
DH
AS
AH
CKS
CKH
CKA
CS
CH
RC
RAS
RP
RCD
RRD
DPL
DPL
DAL
DAL
T
REF
note that the power-on sequence must be executed before starting memory operation.
(max.).
when the output is in the high impedance state.
3
2
3
2
3
2
3
2
3
2
3
2
Parameter
Clock Cycle Time
Access Time From CLK
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
Output LOW Impedance Time
Output HIGH Impedance Time
Input Data Setup Time
Input Data Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
CKE to CLK Recovery Delay Time
Command Setup Time (CS, RAS, CAS, WE, DQM)
Command Hold Time (CS, RAS, CAS, WE, DQM)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
Transition Time
Refresh Cycle Time
HZ
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
T
= 1 ns.
(4)
(1,2,3)
(5)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
1CLK+t
1CLK+t
1CLK+3
1CLK
1CLK
Min.
2.5
2.5
2.0
2.0
2.0
2.0
10
68
42
18
18
15
1
8
3
3
0
1
1
1
1
RP
RP
-8
120,000
Max.
10
64
6
7
6
7
1CLK+t
1CLK+t
1CLK+3
1CLK
1CLK
Min.
OH
3.5
3.5
2.5
2.5
2.0
2.0
2.0
2.0
10
10
70
44
18
18
15
0
1
1
1
1
1
(min.) or V
IH
RP
RP
-10
(min.) and V
120,000
ISSI
Max.
10
64
7
9
7
9
OL
(max.)
IL
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
7

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