AD5165BUJZ100-R2 Analog Devices Inc, AD5165BUJZ100-R2 Datasheet - Page 5

• Manufacturer Part Number: AD5165BUJZ100-R2
• Description: IC DGTL POT 100K LP TSOT23-8
• Manufacturer: Analog Devices Inc

Specifications of AD5165BUJZ100-R2

• Taps: 256
• Resistance (ohms): 100K
• Number Of Circuits: 1
• Temperature Coefficient: 35 ppm/°C Typical
• Memory Type: Volatile
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-8, TSOT-8
• Resistance In Ohms: 100K
• End To End Resistance: 100kohm
• Track Taper: Linear
• No. Of Steps: 256
• Resistance Tolerance: ± 20%
• Supply Voltage Range: 2.7V To 5.5V
• Control Interface: Serial, SPI
• No. Of Pots: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: EVAL-AD5165EBZ - BOARD EVALUATION FOR AD5165
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: AD5165BUJZ100-R2; AD5165BUJZ100-R2TR

AD5165
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
V
V
Maximum Current
Digital Inputs and Output Voltage to GND
Operating Temperature Range
Maximum Junction Temperature (T
Storage Temperature
Lead Temperature (Soldering, 10 – 30 sec)
Thermal Resistance
1
2
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
of the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
Maximum terminal current is bounded by the maximum current handling
Package power dissipation = (T
DD
A
A
, V
I
I
I
WB
WB
WA
= +25°C, unless otherwise noted.
to GND
B
, I
, V
Continuous (R
Continuous (R
WA
W
Pulsed
to GND
2
WB
WA
θ
JA
≤ 1 kΩ, A open)
≤ 1 kΩ, B open)
: TSOT-8
JMAX
− TA)/θ
JMAX
JA
1, 2
.
2
2
)
Value
–0.3 V to +7 V
V
±20 mA
±5 mA
±5 mA
0 V to +7 V
–40°C to +125°C
150°C
–65°C to +150°C
245°C
200°C/W
DD
Rev. 0 | Page 5 of 16
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.