SI4133T-BM Silicon Laboratories Inc, SI4133T-BM Datasheet - Page 9

• Manufacturer Part Number: SI4133T-BM
• Description: IC RF SYNTHESIZER DUAL 28MLP
• Manufacturer: Silicon Laboratories Inc
• Type: Frequency Synthesizerr

Specifications of SI4133T-BM

• Pll: Yes
• Input: Clock
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 1:2
• Differential - Input:output: No/No
• Frequency - Max: 1.8GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Frequency-max: 1.8GHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 5. Receiver Characteristics (Continued)
(V
Parameter
LNA Voltage Gain
LNA Gain Control Range
Analog PGA Control Range
Analog PGA Step Size
Digital PGA Control Range
Digital PGA Step Size
Maximum Differential Output Voltage
Output Common Mode Voltage
Differential Output Offset Voltage
Baseband Gain Error
Baseband Phase Error
Output Load Resistance
Output Load Capacitance
Group Delay
Differential Group Delay
Powerup Settling Time
DD
= 2.7 to 3.0 V, T
11
3,8
A
= –20 to 85 °C)
9,10
3,12
10,11
11
10
10
9
9,10
9
ΔG
ΔG
Symbol
ΔG
G
R
C
DPGA
LNA
APGA
LNA
L
L
Rev. 1.4
DCS / PCS inputs
DCS / PCS inputs
DACCM[1:0] = 00
DACCM[1:0] = 01
DACCM[1:0] = 10
From powerdown
DACFS[1:0] = 00
DACFS[1:0] = 01
DACFS[1:0] = 10
Test Condition
Single-ended
Single-ended
GSM input
GSM input
CSEL = 0
CSEL = 1
CSEL = 0
CSEL = 1
1.05
1.15
Min
3.2
0.8
1.6
2.8
0.8
13
13
10
—
—
—
—
—
—
—
—
—
—
—
—
—
4
1.25
1.35
200
Typ
4.0
1.0
2.0
3.5
1.0
17
15
17
16
63
—
—
—
—
—
—
—
—
—
8
1
1.45
1.55
Max
220
4.8
1.2
1.5
1.2
2.4
4.2
21
12
19
50
10
22
16
—
—
—
—
—
1
1
1
Aero
V
V
V
Unit
deg
mV
dB
dB
dB
dB
dB
dB
dB
dB
kΩ
pF
µs
µs
µs
µs
µs
PPD
PPD
PPD
%
V
V
V
9