SI4133T-BM Silicon Laboratories Inc, SI4133T-BM Datasheet - Page 4
SI4133T-BM
Manufacturer Part Number
SI4133T-BM
Description
IC RF SYNTHESIZER DUAL 28MLP
Manufacturer
Silicon Laboratories Inc
Type
Frequency Synthesizerr
Specifications of SI4133T-BM
Pll
Yes
Input
Clock
Output
Clock
Number Of Circuits
1
Ratio - Input:output
1:2
Differential - Input:output
No/No
Frequency - Max
1.8GHz
Divider/multiplier
Yes/No
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Frequency-max
1.8GHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4133T-BMR
Manufacturer:
SILICON
Quantity:
6 523
Company:
Part Number:
SI4133T-BMR
Manufacturer:
TI
Quantity:
1 536
Part Number:
SI4133T-BMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Table 1. Recommended Operating Conditions
Aero
1. Electrical Specifications
Table 2. Absolute Maximum Ratings
4
Parameter
Ambient Temperature
DC Supply Voltage
DC Supply Voltages Difference
Notes:
Parameter
DC Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
2. DC supply voltage difference specification applies to power supply pins per IC.
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si4200 and Si4133T devices are high-performance RF integrated circuits with an ESD rating of < 2 kV.
3. For signals SCLK, SDI, SEN, PDN, XEN, and XIN.
4. At SAW filter output for all bands.
Typical values apply at 2.85 V and an operating temperature of 25 °C unless otherwise stated. Parameters are tested in
production unless otherwise stated.
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Handling and assembly of these devices should only be done at ESD-protected workstations.
3
3
4
Symbol
1,2
V
V
T
DD
A
Δ
Symbol
T
V
T
V
I
STG
OP
DD
IN
IN
Rev. 1.4
1,2
Test Condition
–0.3 to (V
–0.5 to 3.3
–55 to 150
–40 to 95
Value
±10
10
DD
–0.3
Min
–20
2.7
+ 0.3)
2.85
Typ
25
—
Max
3.0
0.3
85
Unit
dBm
mA
°C
°C
V
V
Unit
°C
V
V