Q65110-A2708 OSRAM Opto Semiconductors Inc, Q65110-A2708 Datasheet - Page 2

• Manufacturer Part Number: Q65110-A2708
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Reflectiver

Specifications of Q65110-A2708

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 5V
• Collector-emitter Voltage: 30V
• Forward Current: 50mA
• Package Type: SMT
• Collector Current (dc) (max): 20mA
• Power Dissipation: 150mW
• Fall Time: 50000ns
• Rise Time: 50000ns
• Pin Count: 6
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Sender (GaAs-Diode)
Emitter (GaAs diode)
Sperrspannung
Reverse voltage
Vorwärtsgleichstrom
Forward current
Verlustleistung
Power dissipation
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Dauer-Kollektor-Emitter-Sperrspannung
Continuous collector-emitter voltage
Kollektor-Emitter-Sperrspannung, (
Collector-emitter voltage, (
Emitter-Kollektor-Sperrspannung
Emitter-collector voltage
Kollektorstrom
Collector current
Verlustleistung
Total power dissipation
Reflexlichtschranke
Light Reflection Switch
Lagertemperatur
Storage temperature range
Umgebungstemperatur
Ambient temperature range
Verlustleistung
Power dissipation
Elektrostatische Entladung
Electrostatic discharge
Umweltbedingungen / Environment conditions
2010-08-05
t
≤ 2 min)
t
≤ 2 min)
2
Symbol
Symbol
V
I
P
V
V
V
I
P
T
T
P
ESD
3 K3 acc. to EN 60721-3-3 (IEC 721-3-3)
F
C
stg
A
R
tot
CE
CE
EC
tot
tot
Wert
Value
5
50
80
16
30
7
20
100
– 40 … + 100
– 40 … + 100
150
2
Einheit
Unit
V
mA
mW
V
mA
mW
°C
mW
KV
SFH 9201