Q65110-A2708 OSRAM Opto Semiconductors Inc, Q65110-A2708 Datasheet - Page 2
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Q65110-A2708
Manufacturer Part Number
Q65110-A2708
Description
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Reflectiver
Datasheet
1.Q65110-A2708.pdf
(11 pages)
Specifications of Q65110-A2708
Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
5V
Collector-emitter Voltage
30V
Forward Current
50mA
Package Type
SMT
Collector Current (dc) (max)
20mA
Power Dissipation
150mW
Fall Time
50000ns
Rise Time
50000ns
Pin Count
6
Mounting
Surface Mount
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Sender (GaAs-Diode)
Emitter (GaAs diode)
Sperrspannung
Reverse voltage
Vorwärtsgleichstrom
Forward current
Verlustleistung
Power dissipation
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Dauer-Kollektor-Emitter-Sperrspannung
Continuous collector-emitter voltage
Kollektor-Emitter-Sperrspannung, (
Collector-emitter voltage, (
Emitter-Kollektor-Sperrspannung
Emitter-collector voltage
Kollektorstrom
Collector current
Verlustleistung
Total power dissipation
Reflexlichtschranke
Light Reflection Switch
Lagertemperatur
Storage temperature range
Umgebungstemperatur
Ambient temperature range
Verlustleistung
Power dissipation
Elektrostatische Entladung
Electrostatic discharge
Umweltbedingungen / Environment conditions
2010-08-05
t
≤ 2 min)
t
≤ 2 min)
2
Symbol
Symbol
V
I
P
V
V
V
I
P
T
T
P
ESD
3 K3 acc. to EN 60721-3-3 (IEC 721-3-3)
F
C
stg
A
R
tot
CE
CE
EC
tot
tot
Wert
Value
5
50
80
16
30
7
20
100
– 40 … + 100
– 40 … + 100
150
2
Einheit
Unit
V
mA
mW
V
mA
mW
°C
mW
KV
SFH 9201