B1100LB-13-F Diodes Zetex, B1100LB-13-F Datasheet - Page 2

• Manufacturer Part Number: B1100LB-13-F
• Manufacturer: Diodes Zetex

Specifications of B1100LB-13-F

• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 2
• Rev Curr: 500uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 0.75@1AV
• Operating Temp Range: -65C to 175C
• Package Type: SMB
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Compliant

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range (Note 5)
Forward Voltage Drop
Leakage Current (Note 6)
Total Capacitance
Notes:
B1100LB
Document number: DS30077 Rev. 10 - 2
0.01
1.0
4. Valid provided that terminals are kept at ambient temperature.
5. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
6. Short duration pulse test used to minimize self-heating effect.
0.1
10
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Typical Forward Characteristics
0.2
Characteristic
Characteristic
Characteristic
@T
A
0.4
= 25°C unless otherwise specified
@T
0.6
A
= 25°C unless otherwise specified
@ T
@ T
@ I
0.8
R
T
T
= 120°C
= 100°C
= 0.5mA
1.0
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Symbol
2 of 4
V
C
I
R
F
T
Symbol
Symbol
T
V
V
V
J,
R(RMS)
I
R
RWM
V
FSM
RRM
I
T
θ JT
O
R
STG
280
240
200
160
120
Min
80
40
-
-
-
-
0
0.1
Fig. 2 Total Capacitance vs. Reverse Voltage
Typ
D
/dT
-
-
-
-
V , DC
J
R
< 1/R
-65 to +175
Max
0.75
100
θJA
REVERSE VOLTAGE
0.5
5.0
1
Value
Value
100
1.0
2.0
.
70
50
22
Unit
mA
pF
V
10
I
V
V
V
F
R
R
R
= 1.0A, T
= 100V, T
= 100V, T
= 4V, f = 1MHz
Test Condition
(V)
f = 1.0MHz
T = 25 C
j
B1100LB
© Diodes Incorporated
September 2010
°C/W
Unit
Unit
°C
A
V
V
A
A
°
A
A
= 25°C
= 25°C
= 100°C
100