B1100 Diodes Incorporated, B1100 Datasheet

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B1100

Manufacturer Part Number
B1100
Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Manufacturer
Diodes Incorporated
Datasheet

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Features
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Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes:
DS30018 Rev. B-2
Mechanical Data
·
·
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·
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Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ I
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260°C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
Case: SMA / SMB, Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Mounting Position: Any
Marking: Type Number
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
F
Characteristic
= 1.0A
@ T
@ T
@ T
@ T
@ T
T
A
A
A
A
= 125°C
= 25°C
= 100°C
= 25°C
= 100°C
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Symbol
V
T
V
V
R(RMS)
j,
R
I
V
FSM
I
RWM
V
RRM
I
RM
C
T
FM
qJT
O
R
STG
j
1 of 2
A
J
H
B170/B
70
49
@ T
B
E
G
A
= 25°C unless otherwise specified
B170/B - B1100/B
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
B180/B
80
56
C
D
-65 to +150
0.79
0.69
1.0
0.5
5.0
30
80
25
Dim
G
A
B
C
D
E
H
J
B190/B
90
63
All Dimensions in mm
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Min
SMA
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
B170/B - B1100/B
B1100/B
100
70
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
Min
SMB
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
Unit
K/W
mA
pF
°C
V
V
A
A
V

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B1100 Summary of contents

Page 1

... Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Terminal (Note 1) Operating and Storage Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30018 Rev. B-2 B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER ...

Page 2

... Single Half Sine-Wave (JEDEC Method) 100 10 0.1 100 ° Pulse Width = 300 0.2 0.4 0 INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 2 Typical Forward Characteristics REVERSE VOLTAGE (V) R Fig. 4 Typical Junction Capacitance B170/B - B1100/B µ 0.8 1 25° 1.0MHz 100 ...

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