EESX1115 Omron, EESX1115 Datasheet
EESX1115
Manufacturer Part Number
EESX1115
Description
Manufacturer
Omron
Type
Transmissiver
Datasheet
1.EESX1115.pdf
(4 pages)
Specifications of EESX1115
Number Of Elements
1
Output Device
Phototransistor
Gap Width
5mm
Slit Width
0.5mm
Reverse Breakdown Voltage
4V
Collector-emitter Voltage
30V
Forward Current
50mA
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
4000ns
Rise Time
4000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Supplier Unconfirmed
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Electrical and Optical Characteristics (Ta = 25°C)
Four, R0.1
Emitter
Detector
Rising time
Falling time
A
K
C
E
K
A
Terminal No.
Photomicrosensor (Transmissive)
EE-SX1115
Four, R0.1
1.35
1.35
Internal Circuit
+0.06
0.01
+0.06
0.01
1.35
Part B
Part C
1.03
+0.06
0.01
1.03
1.35
14.5
0.2
+0.06
Anode
Cathode
Collector
Emitter
0.01
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated voltage V
Peak spectral sensitivity wavelength λ
Name
Four, 0.25
2.5
5
K
A
C
E
B
Item
(2.1)
Unless otherwise specified, the
tolerances are as shown below.
Four, C0.3
3 mm max.
3
6
10
18
Dimensions
4.2
(11.2)
14
mm
mm
5
mm
mm
0.1
A
A
6
10
18
30
C
C
E
2-2
Optical axis
5 min.
Tolerance
0.3
0.375
0.45
0.55
0.65
Cross section AA
V
I
λ
I
I
I
tr
tf
R
L
D
LEAK
P
P
F
CE
Symbol
(sat)
0.5
(1.94)
Four, 0.5
0.05
12
0.4
Photomicrosensor (Transmissive)
1.2 V typ., 1.5 V max.
0.01 μA typ., 10 μA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 μs typ.
4 μs typ.
■ Features
• 14.5-mm-tall model with a deep slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
■ Ordering Information
Emitter
Detector
Ambient
temperature
Soldering temperature
Photomicrosensor (transmissive)
2. The pulse width is 10 μs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
Value
ature exceeds 25°C.
Description
Forward current
Pulse forward current I
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipation
Operating
Storage
Item
I
V
I
I
V
---
I
V
V
V
F
F
F
F
R
CE
CE
CC
CC
EE-SX1115
= 30 mA
= 20 mA
= 20 mA, V
= 20 mA, I
= 4 V
= 10 V, 0 lx
= 10 V
= 5 V, R
= 5 V, R
Symbol
I
V
V
V
I
P
T
T
T
F
FP
C
opr
stg
sol
R
CEO
ECO
C
EE-SX1115
L
L
L
Condition
CE
= 100 Ω, I
= 100 Ω, I
= 0.1 mA
50 mA (see note 1)
1 A (see note 2)
4 V
30 V
---
20 mA
100 mW (see note 1)
–25°C to 85°C
–30°C to 100°C
260°C (see note 3)
= 10 V
Rated value
Model
L
L
= 5 mA
= 5 mA
143
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EESX1115 Summary of contents
Page 1
Photomicrosensor (Transmissive) EE-SX1115 ■ Dimensions Note: All units are in millimeters unless otherwise indicated. Four, C0.3 1.03 Four, R0.1 5 +0.06 1.35 +0.06 1.35 0.01 0.01 14 0.2 Part Four, R0.1 Optical axis 1.03 +0.06 1.35 0.01 ...
Page 2
Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Light Current vs. Collector Emitter Voltage Characteristics (Typical ...
Page 3
Photomicrosensor (Transmissive) MEMO EE-SX1115 ...
Page 4
... All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html ALL DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527. OMRON ELECTRONIC COMPONENTS LLC 55 E. Commerce Drive, Suite B ...