M393T5750EZA-CE6 Samsung Semiconductor, M393T5750EZA-CE6 Datasheet - Page 14

• Manufacturer Part Number: M393T5750EZA-CE6
• Manufacturer: Samsung Semiconductor

Specifications of M393T5750EZA-CE6

• Lead Free Status / RoHS Status: Compliant

11.0 Operating Current Table :
11.1 M393T6553EZ3 / M393T6553EZA : 512MB(64Mx8 *9) Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.2 M393T6553EZ3 / M393T6553EZA : 512MB(64Mx8 *9) Module
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
RDIMM
IDD3P-S
IDD3P-F
IDD3P-S
Symbol
IDD3P-F
Symbol
IDD4W
IDD2Q
IDD4W
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD5B
IDD6*
IDD6*
IDD0
IDD1
IDD7
IDD0
IDD1
IDD7
F7(800@CL=6)
F7(800@CL=6)
1,035
1,305
1,035
1,935
1,355
1,495
1,080
1,555
1,895
1,705
2,625
765
855
315
360
270
108
540
552
845
840
820
658
72
72
72
- considering Register and PLL current value
E6(667@CL=5)
E6(667@CL=5)
1,215
1,620
1,175
1,360
1,395
1,725
1,540
2,200
675
810
315
360
270
108
495
945
990
512
775
780
740
578
965
72
72
72
14 of 26
D5(533@CL=4)
D5(533@CL=4)
1,620
1,085
1,225
1,190
1,420
1,420
2,090
675
765
270
315
270
108
450
810
990
990
472
660
675
660
498
850
72
72
72
CC(400@CL=3)
CC(400@CL=3)
1,620
1,135
1,075
1,250
1,255
1,980
630
765
270
315
270
108
450
765
900
945
950
432
590
615
580
418
780
72
72
72
Rev. 1.4 August 2008
DDR2 SDRAM
(T
(T
Units
Units
A
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
=0
=0
o
o
C, V
C, V
DD
DD
Notes
Notes
= 1.9V)
= 1.9V)