5962-8606308YA QP SEMICONDUCTOR, 5962-8606308YA Datasheet
5962-8606308YA
Specifications of 5962-8606308YA
Available stocks
Related parts for 5962-8606308YA
5962-8606308YA Summary of contents
Page 1
... QP27C256 – 256 Kilobit (32K x 8) CMOS EPROM General Description The QP27C256 is a 32Kx8 (256-Kbit), UV erasable programmable read-only memory. It operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. The QP27C256 meets the same specification requirements and utilizes the same programming methodology as the AMD 27C256 that it replaces. ...
Page 2
Pin Name Function A – A Address Inputs 0 14 Chip Enable Input – D Data Input/Output Q0 Q7 Output Enable Input Program Enable Input PGM ( ...
Page 3
... As a minimum, a 0.1μF ceramic capacitor (high frequency, low inductance) should be used on each device between V and V to minimize transient effects. In addition, to overcome the voltage drop caused by the CC SS inductive effects of the printed circuit board traces on EPROM arrays, a 4.7μF bulk electrolytic capacitor should be used QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 = ...
Page 4
V and V for each eight devices. The location of the capacitor should be close to where the power supply connected to the array. MODE Select Table Mode CE Read V IL Output Disable X Standby ...
Page 5
Minimum DC Input Voltage on input or I/O pins –0.5V. During voltage transitions, the input may overshoot V 2.0V for periods 20ns. Maximum DC voltage on input and I/O pins is VCC+0.5V. During transitions, input ...
Page 6
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Test Operating Current, CMOS QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Symbol Conditions -55ºC ≤TA≤+125ºC Unless Otherwise Specified 35ns CC CMOS ...
Page 7
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Test Standby Current, TTL QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Symbol Conditions -55ºC ≤TA≤+125ºC Unless Otherwise Specified 35ns SB TTL 5.5V 45ns CC ...
Page 8
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Test Standby Current, CMOS V Read Current PP Input Low Voltage TTL Input Low Voltage CMOS Input High Voltage TTL Input High Voltage CMOS Output Low Voltage Output High Voltage Output Short Circuit Current ...
Page 9
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Test Address to Output Delay to Output Delay CE QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Symbol Conditions -55ºC ≤TA≤+125ºC Unless Otherwise Specified 35ns CE ACC IL = ...
Page 10
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS Test to Output Delay OE high to Output Float OE Output hold from Addresses Whichever Occurred First \12 Input Capacitance Output Capacitance QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA ...
Page 11
... QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Package (Mil-Std-1835) GDIP3-T28 CDIP4-T28 (DIP) GDIP1-T28 CDIP2-T28 (DIP) ...
Page 12
... QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 ...
Page 13
... Part Number 5962-8606321QXA 5962-8606321QYA QP Semiconductor supports Source Control Drawing (SCD), and custom package development for this product family. Notes: Package outline information and specifications are defined by Mil-Std-1835 package dimension requirements. “-MIL” products manufactured by QP Semiconductor are compliant to the assembly, burn-in, test and quality conformance requirements of Test Methods 5004 & ...