MT46V64M8TG-6TAT:F Micron Technology Inc, MT46V64M8TG-6TAT:F Datasheet - Page 83

• Manufacturer Part Number: MT46V64M8TG-6TAT:F
• Manufacturer: Micron Technology Inc

Specifications of MT46V64M8TG-6TAT:F

• Lead Free Status / RoHS Status: Not Compliant

Figure 48:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
BA0, BA1
Address
DQS
DQ 5
CK#
CKE
A10
DM
CK
t
t
IS
IS
NOP 1
Bank WRITE – Without Auto Precharge
T0
t
t
IH
IH
Notes:
t
t
Bank x
IS
IS
Row
Row
ACT
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 50 on page 85 for detailed DQ timing.
t
t
IH
IH
t
times.
CK
t
t
RCD
RAS
NOP 1
T2
t
CH
t
CL
WRITE 2
t
Bank x
Col n
IS
3
T3
t
t
DQSS (NOM)
IH
t
WPRES
t DS
83
t
WPRE
NOP 1
T4
DI
b
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 1
T5
512Mb: x4, x8, x16 DDR SDRAM
t
DQSH
T5n
t
WPST
NOP 1
T6
Transitioning Data
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t
NOP 1
WR
T7
Operations
One bank
All banks
Don’t Care
Bank x 4
T8
PRE
t
RP