TDA8501T/N1,118 NXP Semiconductors, TDA8501T/N1,118 Datasheet - Page 18

• Manufacturer Part Number: TDA8501T/N1,118
• Manufacturer: NXP Semiconductors

Specifications of TDA8501T/N1,118

• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
April 1993
CVBS output (pin 16)
I
I
V
G
G
G
G
R
Oscillator output (pin 23)
OSC
Filter tuning loop (pin 15)
V
V
V
V
H2 (pin 4)
V
V
I
I
V
V
I
I
Composite sync input (pin 24)
V
I
I
BURST ADJ (pin 21; note 5)
BP
SYMBOL
sink
source
I
O
sink
source
I
O
O
DC
DC
DCL
DCH
IL
IH
O
O
SYNC
O
PAL/NTSC encoder
ø
V
maximum sink current
maximum source current
DC voltage level
Y +SYNC gain;
from pin 20 to pin 16
chrominance difference;
from pin 14 to pin 16
differential phase
differential gain
output resistance
series-resonance
DC control voltage level NTSC
DC control voltage level PAL
limited DC-level LOW
limited DC-level HIGH
LOW level input voltage
HIGH level input voltage
current for forcing HIGH
current for forcing LOW
voltage out LOW
voltage out HIGH
maximum sink current
maximum source current
SYNC pulse amplitude
slicing level
input current
maximum output current during
SYNC
DC voltage level
PARAMETER
Y +SYNC = 0
note 3
note 4
the resonance resistance of the crystal should be
parallel capacitance of the crystal should be
I
I
inactive
active
O
I
= 200 A
= 200 A
CONDITIONS
18
650
1000
0
4
220
260
4
50
50
75
MIN.
1.6
12
0
120
0.83
0.88
0.27
1.8
300
50
4
100
V
(V13)
REF
TYP.
Preliminary specification
10 pF.
3
3
1
5
600
MAX.
0.5
TDA8501
60
V
dB
dB
degrees
dB
V
V
V
V
V
V
V
V
mV (p-p)
%
V
and the
A
A
A
A
A
A
A
A
UNIT