STK14C88-3WF35 Cypress Semiconductor Corp, STK14C88-3WF35 Datasheet - Page 9

• Manufacturer Part Number: STK14C88-3WF35
• Description: STK14C88-3WF35
• Manufacturer: Cypress Semiconductor Corp

Specifications of STK14C88-3WF35

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP (0.600", 15.24mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention and Endurance
Capacitance
In the following table, the capacitance parameters are listed.
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
AC Test Conditions
Input Pulse Levels .................................................. 0 V to 3 V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels ................... 1.5 V
Note
Document Number: 001-50592 Rev. *A
DATA
NV
C
C
8. These parameters are guaranteed by design and are not tested.
IN
OUT
Parameter
C
Θ
Θ
R
Parameter
Parameter
JA
JC
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Description
Input Capacitance
Output Capacitance
Data Retention
Nonvolatile STORE Operations
Description
Output
3.3V
Description
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
30 pF
Figure 6. AC Test Loads
T
V
A
CC
[8]
= 25°C, f = 1 MHz,
Test Conditions
= 0 to 3.0 V
R1 317Ω
[8]
Test Conditions
351Ω
R2
1,000
Min
100
32-SOIC
TBD
TBD
Max
5
7
STK14C88-3
32-PDIP
TBD
TBD
Page 9 of 17
Years
Unit
Unit
K
pF
pF
°C/W
°C/W
Unit
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