BCV62BE6327XT Infineon Technologies, BCV62BE6327XT Datasheet
BCV62BE6327XT
Specifications of BCV62BE6327XT
Related parts for BCV62BE6327XT
BCV62BE6327XT Summary of contents
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PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BCV62A 3Js BCV62B 3Ks BCV62C 3Ls Maximum ...
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Electrical Characteristics at T Parameter DC Characteristics of T1 Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µA, ...
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Electrical Characteristics at T Parameter DC Characteristics Base-emitter forward voltage µ 250 mA E Matching of transistor T1 and transistor 0.5mA and CE1 ...
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Test circuit for current matching ... CE1 Note: Voltage drop at contacts: V Characteristic for determination parameter under condition ... ...
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Collector-base capacitance C Emitter-base capacitance CEB Permissible pulse load totmax totDC p BCV 62 3 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...