BCR133E6327 Infineon Technologies, BCR133E6327 Datasheet - Page 7

• Manufacturer Part Number: BCR133E6327
• Description: TRANS NPN BR 50V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR133E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 130MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR133; BCR133E6327XT; BCR133INTR; BCR133XTINTR; BCR133XTINTR; SP000010757

Permissible Puls Load R
BCR133S
Permissible Puls Load R
BCR133W
K/W
K/W
10
10
10
10
10
10
10
10
10
10
-1
-1
3
2
1
0
3
2
1
0
10
10
-6
-6
10
10
-5
-5
10
10
-4
-4
10
10
-3
-3
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
10
=
=
-2
-2
( t
( t
p
p
s
s
)
)
t
t
p
p
10
10
0
0
7
Permissible Pulse Load
P
BCR133S
Permissible Pulse Load
P
BCR133W
totmax
totmax
10
10
10
10
10
10
10
10
-
-
3
2
1
0
3
2
1
0
10
10
/ P
/ P
-6
-6
totDC
totDC
10
10
-5
-5
=
=
10
10
( t
( t
p
p
-4
-4
)
)
10
10
-3
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
BCR133...
-2
-2
2007-09-17
s
s
t
t
p
p
10
10
0
0