BCR133E6327 Infineon Technologies, BCR133E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR133E6327
• Description: TRANS NPN BR 50V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR133E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 130MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR133; BCR133E6327XT; BCR133INTR; BCR133XTINTR; BCR133XTINTR; SP000010757

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
V
-1
3
2
1
0
2
1
0
10
10
-4
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-4
10
FE
i (on)
-3
-40 °C
-25 °C
25 °C
85 °C
125 °C
=
10
= ( I
( I
-3
C
)
C
10
)
-2
10
-2
A
I
I
C
C
A
10
10
-1
-1
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
0.35
0.25
0.15
0.05
10
10
0.5
0.4
0.3
0.2
0.1
= 5V (common emitter configuration)
V
V
-1
0
1
0
10
10
= ( I
-3
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), I
10
C
-40 °C
-25 °C
25 °C
85 °C
125 °C
/I
-4
B
i(off)
= 20
10
10
=
-3
-2
( I
C
)
BCR133...
2007-09-17
10
A
-2
I
I
C
C
A
10
10
-1
-1