BF 517 E6327 Infineon Technologies, BF 517 E6327 Datasheet - Page 2

• Manufacturer Part Number: BF 517 E6327
• Description: TRANSISTOR RF NPN 15V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BF 517 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 25mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 2mA, 1V
• Power - Max: 280mW
• Frequency - Transition: 2.5GHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 2.5 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BF517E6327XT; SP000010958

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain-
I
I
Collector-emitter saturation voltage
I
C
C
C
C
CB
CB
EB
= 1 mA, I
= 2 mA, V
= 25 mA, V
= 10 mA, I
= 2.5 V, I
= 10 V, I
= 25 V, I
B
CE
B
E
E
= 0
C
CE
= 1 mA
= 0
= 0
= 0
= 1 V, pulse measured
= 1 V, pulse measured
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
h
V
CBO
EBO
FE
(BR)CEO
CEsat
min.
15
40
20
-
-
-
-
Values
typ.
0.1
70
-
-
-
-
-
max.
0.05
150
100
0.4
10
-
2007-04-20
-
BF517
Unit
V
µA
-
V