MMBTA 14 LT1 Infineon Technologies, MMBTA 14 LT1 Datasheet - Page 4

• Manufacturer Part Number: MMBTA 14 LT1
• Description: TRANSISTOR DARL NPN 30V SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBTA 14 LT1

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.3 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000, 20000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA 14 LT1; MMBTA14LT1INTR; MMBTA14LT1XT; SP000010862

f
Transition frequency f
V
Total power dissipation P
T
CE
MHz
mW
10
10
10
5
5
360
300
270
240
210
180
150
120
= 5 V, f = 200 MHz
90
60
30
10
3
2
1
0
SMBTA 13/14
0
0
15
30
5
45
10
1
60
T
75
=
5
90 105 120
tot
10
(I
= (T
C
2
)
S
mA
EHP00825
C
)
T
°C
S
150
10
3
4
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
pF
19
15
13
11
10
10
10
10
9
7
5
3
1
5
5
5
0
/P
3
2
1
0
10
SMBTA 13/14
-6
totDC
10
4
=
-5
SMBTA14/MMBTA14
(t
10
8
p
-4
CEB
)
D
=
T
10
t
p
12
-3
t
eb
p
10
16
cb
-2
2007-04-19
= (V
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= (V
t
V
s
p
EHP00824
V
EB
CB
CCB
CB
)
/V
22
10
)
EB
0